941nm 2%占空比大功率半导体激光器线阵列  

941 nm 2% Duty Cycle High Output Power Semiconductor Laser Diode Array

作　　者：辛国锋[1,2] 花吉珍[2] 陈国鹰[1] 康志龙[1] 杨鹏[2] 徐会武[2] 安振峰[2] 

机构地区：[1]河北工业大学信息工程学院微电子所,天津300130 [2]中国电子科技集团公司电子第十三研究所光电专业部,河北石家庄050051

出　　处：《光子学报》2004年第5期521-524,共4页Acta Photonica Sinica

基　　金：河北省科技攻关项目 (编号 :0 32 1 35 4 0D);河北省自然科学基金 (编号 :6 0 30 80 )项目

摘　　要：计算了半导体激光器的激射波长与量子阱宽度以及有源层中In组分的关系 ,确定了94 1nm波长的量子阱宽度和In组分 并利用金属有机化合物气相淀积 (MOCVD)技术生长了InGaAs/GaAs/AlGaAs分别限制应变单量子阱激光器材料 利用该材料制成半导体激光器线阵列的峰值波长为 94 0 .5nm ,光谱的FWHM为 2 .6nm ,在 4 0 0 μs ,5 0Hz的输入电流下 ,输出峰值功率达到1 1 4 .7W(1 6 5A) ,斜率效率高达 0 .81W/A ,阈值电流密度为 1 0 3.7A/cm2 ,串联电阻 5mΩ ,最高转换效率可达 36 .9%The relations of the semiconductor laser stimulated wavelength to the width of quantum well and the In composition in the quantum well are calculated, then the width of quantum well and the In composition in the quantum well are determined. InGaAs/GaAs/AlGaAs separated confinement heterostructure strained single quantum well materials was grown by the technology of metal organic chemical vapor deposition (MOCVD). The peak wavelength of the semiconductor laser linear array with the materials is 940.5 nm, the full width at half maximum(FWHM) is 2.6 nm, the peak output power is 114.7 W (400 μs,50 Hz, drive current 165 A), the slop efficiency is 0.81 W/A, current density is 103.7 A/cm 2, series resistance is 5 mΩ, and the 36.9% wall plug efficiency is reached.

关 键 词：金属有机化合物气相淀积 半导体激光器阵列 分别限制结构 单量子阱 

分 类 号：TN248[电子电信—物理电子学]