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作 者:王国雄[1] 严晓浪[1] 史峥[1] 陈志锦[1]
机构地区:[1]浙江大学超大规模集成电路设计研究所,浙江杭州310027
出 处:《浙江大学学报(工学版)》2004年第5期521-524,548,共5页Journal of Zhejiang University:Engineering Science
基 金:国家自然科学基金资助项目(60176015).
摘 要:为了使光刻结果更好地符合版图设计,保证在硅片上制造出的电路在功能上与设计电路一致,提出了一种对掩模进行自动补偿的系统性技术.根据光刻机和光刻胶特性,模拟了实际的光刻过程.校正处理的核心是基于模型的掩模图形优化模块,通过调用光刻模拟器直接对输入待校正的掩模图形进行优化.最后通过对掩模版图的验证,保证校正后的掩模图形满足成像图形的精度要求.应用实例证明,该系统准确实现了版图的精确设计与校正.In order to make the lithographic results best correspond to the layout design, and preserve the functional correspondence between the designed circuit and the manufactured circuit, a systematic technique for model-based automatically compensating for mask was set up. The actual lithographic process was simulated according to the process conditions, such as lithographic tools and the property of resist. The correction core is model-based module for optimizing mask patterns, which directly optimizes input correcting patterns using the lithographic simulator. Through verifying the mask layout, it shows that the corrected patterns satisfy the precision of imaged patterns. The application example shows that the system can implement precisely the design and correction for layout.
分 类 号:TN305.7[电子电信—物理电子学]
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