等离子体源离子注入表面改性  

Plasma Source Ion Implantation for Surface Modification

作　　者：吴知非[1] 施芸城[1] 陈英方[1] 陈惠敏[2] 李群林 

机构地区：[1]中国纺织大学,上海200051 [2]南通纺织工学院 [3]中纺大应物专业

出　　处：《纺织基础科学学报》1992年第4期378-384,共7页

基　　金：国家自然科学基金

摘　　要：研究了等离子体源离子注入对聚酰亚胺薄膜电性能的改变。处理后该薄膜面电阻率下降6个数量级。由X光电子能谱及全反射衰减红外谱分析,注入时聚酰亚胺表面分子链上的C=0、C—H、C—N、C=C等化学键被离子部分地打断而形成富碳层,并有无定形碳存在,是面电阻率下降的主要原因。Plasma source ion implantation (PSII) is a new optimized technique for surface modification. In this paper, the improvement of electric properties of polyimide (PI) film by PSII has been studied. After being treated by PSII the surface resistiviW (ps) of PI film decreased about six orders. By analysis of attenuated total reflection infrared (ATR-IR) spectrum and x-ray photoelectronic spectrum (XPS), we concluded that the C=0. C—H. C—N、C=C bond of surface molecular chain of PI film is broken partially by PSII. Then there is a reached carbon layer and the amorphous carbon existing in the surface of PI film, which is the primary factor of the improvement of the electric properties of PI film.

关 键 词：等离子体源 离子注入 表面改性 聚酰亚胺 薄膜 

分 类 号：TQ323.707[化学工程—合成树脂塑料工业] TQ320.67