调制掺杂AlGaAs/InGaAs/GaAs应变量子阱结构的研究  

Studies of Modulation Doped AlGaAs/InGaAs/GaAs Strained Quantum Well Structures

作　　者：彭正夫 张允强[1] 高翔[1] 孙娟[1] 朱顺才[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1992年第4期332-335,共4页Research & Progress of SSE

摘　　要：报道调制掺杂AlGaAs/InGaAs/GaAs应变量子阱结构的分子束外延生长、变温霍尔效应和电化学c—v测量,并对输运性质进行了讨论。用这种材料研制的PM-HEMT(pseudomorphic high electron mobility transistors)器件,栅长0.4μm,在12GHz下噪声系数1.03dB,相关增益7.5dB。Pseudomorphic high electron mobility transistor structures with In0.18Ga0.82 As single quantum well were grown by MBE. Hall effect measurement at variable temperature is discussed, and results of NF 1. 03 dB, Ga 7. 5 dB at 12 GHz for a PM-HEMT with 0. 4 m gate length are also given.

关 键 词：分子束外延 调制掺杂 量子阱 

分 类 号：TN304.054[电子电信—物理电子学]