低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析  

Investigation of PL Linewidth and Quantum Size Effect of InGaAs/InP Quantum Wells Grown by LP-MOCVD

作　　者：陈德勇 朱龙德[1] 李晶[1] 熊飞克[1] 徐俊英[1] 万寿科[1] 梁骏吾[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1993年第6期345-352,共8页半导体学报（英文版）

摘　　要：用低压MOCVD方法生长了InGaAs/InP单量子阱及多量子阱结构。用低温光致发光方法研究了量子阱样品因量子尺寸效应引起的激子能量移动以及激子谱线线宽同量子阱阱宽的关系,7A阱宽的激子能量移动达370meV。选取Q_c=△E_c/△E_g=0.4,采用修正后的Kronig-Penny模型,考虑能带的非抛物线性,拟合了激子能量移动和阱宽的关系曲线。用有效晶体近似方法(VCA)分析了激子尺寸范围内界面不平整度以及合金组分无序对激子谱线线宽的影响。以界面不平整度参量δ_1和δ_2,合金组分元序参量r_c为拟合参数,拟合了激子线宽对阱宽的关系曲线。取δ_1=2.93A,δ_2=100A,r_c=3ML,理论拟合值与实验值符合较好。Single and multiple InGaAs/InP quantum well structures were grown by MOCVD at 50mbar. Phototuminescence method was used to characterize the relation between the exciton energy shift and the well width caused by quantum size effect. The energy shift of a 7A quantum well was as high as 370meV. Considering the nonparabolic nature of the bands, we took Q_c=△E_c/△E_g=0. 4, and got a curve about energy shift and width, which was a good fit for the experimental points. Virtul Crystal Approximation (VCA) method was applied to discuss the dominant mechanism for the linewidth broadening over the extent of exciton. With the interface microscopic fluctuations δ_1=2.93A,δ_2 =100A ,and the radius of the cluster in the alloy R_c=3ML, variation of the exciton photoluminescence linewidth Γ as a function of well width d was obtained, which was also a very good approximation to the experimental results.

关 键 词：INGAAS/INP 量子阱 光致发光法 

分 类 号：TN304.26[电子电信—物理电子学]