PECVD淀积氮化硅薄膜性质研究  

PROPERTIES OF PECVD SiN_X FILM FOR SOLAR CELLS

作　　者：王晓泉[1] 汪雷[1] 席珍强[1] 徐进[1] 崔灿[1] 杨德仁[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《太阳能学报》2004年第3期341-344,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金项目(59976035);国家自然科学基金重大项目(50032010)

摘　　要：使用等离子体增强化学气相沉积(PlasmaEnhancedChemicalVaporDeposition,PECVD)在P型硅片上沉积了氮化硅(SiNx)薄膜,使用薄膜测试仪观察了薄膜的厚度、折射率和反射光谱,利用扫描电子显微镜(SEM),原子力显微镜(AFM)观察了截面和表面形貌,使用傅立叶变换红外光谱仪(FTIR)和能谱仪(EDX)分析了薄膜的化学结构和成分。最后,考察了薄膜在经过快速热处理过程后的热稳定性,并利用霍尔参数测试仪(Hall)比较了薄膜沉积前后载流子迁移率的变化。Silicon nitride thin films were prepared on P type Cz silicon wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The thickness, refractive index and spectra reflection of films were tested by thin film measurer. The cross-sectional and surface morphology were investigated by SEM (Scan Electron Microscope) and AFM (Atomic Force Microscope). The films structure and chemical composition were analyzed by FTIR (Fourier Transform Infrared Spectroscopy) and EDX (Energy Dispersive X-ray Analysis). Finally the thermal stability of SiNx thin films was tested, and the carrier mobility before and after deposition was compared by Hall effect measurement respectively.

关 键 词：太阳电池 PECVD 氮化硅 

分 类 号：TK511.4[动力工程及工程热物理—热能工程]