非平衡磁控溅射沉积系统伏安特性模型研究  

Investigation of the model of the discharge properties of the unbalanced magnetron sputtering system

作　　者：牟宗信[1] 李国卿[1] 车德良[1] 黄开玉[1] 柳翠[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024

出　　处：《物理学报》2004年第6期1994-1999,共6页Acta Physica Sinica

摘　　要：非平衡磁控溅射沉积系统的伏安特性对阴极溅射和薄膜沉积过程具有重要的影响 .通过分析在常规磁控溅射沉积系统中非平衡磁场对于放电过程的影响 ,根据蔡尔得定律研究了非平衡磁场对磁控溅射沉积系统伏安特性影响的基本规律 ;The voltage current property of the unbalanced magnetron sputtering (UMS) system has significant influence on the sputtering process and films deposition process. Based on the analysis of the relationship between unbalanced magnetic field and properties of the unbalanced magnetron sputtering system, according to Child law the model of the V I property of the UMS system is set up. Comparisons between the model calculation results and the experimental data indicate that the model correctly expresses the relation between the unbalanced magnetic field and the discharge properties of the UMS system.

关 键 词：等离子体 非平衡磁控溅射沉积系统 金属薄膜 伏安特性 同轴约束磁场 磁场分布 

分 类 号：O484[理学—固体物理]