随机掺杂对超深亚微米SOI MOSFETs阈值电压影响研究  

Study on the Influence of Random Doping on the Threshold Voltage of Ultra Deep Submicron SOI MOSFETs

作　　者：苏亚丽 杨江江 

机构地区：[1]西安石油大学,机械工程学院,陕西西安 [2]西安交通大学,微电子学院,陕西西安

出　　处：《应用物理》2018年第11期472-479,共8页Applied Physics

基　　金：陕西省教育厅科研计划(16JK1609)。

摘　　要：本文研究随机掺杂引起的超深亚微米SOI MOSFETs器件阈值电压波动,提出一种由沟道粒子数目波动引起的阈值电压波动标准差的解析模型,计入了沟道粒子数目和位置变化所带来的阈值电压波动影响。通过研究不同参数下器件阈值电压变化情况,所建立模型计算的预测结果与Sentaurus TCAD数值模拟结果吻合良好。In this paper, the threshold voltage fluctuations of ultra-deep submicron SOI MOSFETs caused by random dopant fluctuation are studied. An analytical model of the standard deviation of threshold voltage fluctuation based on the number fluctuation of channel particles is proposed, which takes into account both the variation of the number and position of channel particles. By studying the threshold voltage variations under different parameters, the predicted results calculated by the model are in good agreement with the numerical simulation results of Sentaurus TCAD.

关 键 词：SOI MOSFETS 阈值电压 随机掺杂 

分 类 号：TN3[电子电信—物理电子学]