supported by the National Natural Science Foundation of China (Grant No. 50775101);the New Century Excellent Talents (Grant No. NCET-04-0515);the Jiangsu Provincial Science and Technology Supporting Project,China (Grant No. BE2008030);Qing Lan Project (2008-04);Jiangsu University Natural Science Foundation of China (Grant No. 07KJB430023)
The electronic band structures of periodic models for S^H compounds are investigated by the density functional theory. Our results show that the Si H compound changes from indirect-gap semiconductor to direct-gap semi...