国家自然科学基金(s50972054)

作品数：2被引量：1H指数：1
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Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer
《Chinese Physics B》2013年第9期591-594,共4页汤振杰 李荣 殷江 
supported by the Science and Technology Research Key Project of Education Department of Henan, China (Grant No. 13A140021);the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124);the National Basic Research Program of China (Grant No. 2010CB934201);the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004)
A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory de...
关键词：composition modulated films memory device charge trap atomic layer deposition 
The charge storage characteristics of ZrO_2 nanocrystallite-based charge trap nonvolatile memory被引量：1
《Chinese Physics B》2013年第6期565-569,共5页汤振杰 李荣 殷江 
supported by the Science Fund of Educational Department of Henan Province of China (Grant No. 13A140021);the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124);the State Key Program for Basic Research of China (Grant No. 2010CB934201);the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004)
ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a （ZrO2）0.6（SiO2）0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation react...
关键词：charge storage ZrO2 nanocrystallites atomic layer deposition pulse laser deposition 
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