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Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In_(0.18)Al_(0.82)N/GaN heterostructures: 《Chinese Physics B》2014年第3期493-497,共5页林芳沈波卢励吾许福军刘新宇魏珂; Project supported by the National Natural Science Foundation of China(Grant Nos.60444007,11174008,60325413,and 10774001); By using temperature-dependent current-voltage, variable-frequency capacitance-voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-ma...; 关键词：leakage current thermal oxidation Frenkel-Poole emission

Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_(1-x)N/GaN heterostructures被引量：1: 《Chinese Physics B》2011年第7期393-398,共6页林芳沈波卢励吾刘新宇魏珂许福军王彦马楠黄俊; Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,10774001,60736033,and 60890193);the National Basic Research Program of China (Grant Nos.2006CB604908 and 2006CB921607); By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1...; 关键词：inductively coupled plasma subsequent annealing defect state

Different temperature dependence of carrier transport properties between Al_xGa_(1-x)N/In_yGa_(1-y)N/GaN and Al_xGa_(1-x)N/GaN heterostructures被引量：3: 《Chinese Physics B》2011年第5期374-378,共5页宋杰许福军黄呈橙林芳王新强杨志坚沈波; Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,60736033,60890193,and 10774001); The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN he...; 关键词：temperature dependence Hall mobility parallel conductivity

Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al_(0.4)Ga_(0.6)N: 《Chinese Physics B》2011年第4期369-373,共5页李涛秦志新许正昱沈波张国义; supported by the National Natural Science Foundation of China (Grant Nos. 10774001,60736033,60876041 and 60577030);National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607);the National Key Basic Research and Development Program of China (973 Project) (Grant No. TG2007CB307004); This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au （15 nm/85 nm/20 nm/95 nm） contacts on n-A10.4Ga0.6N. Contacts annealed at 700 ℃ and higher temperatures show Ohmic...; 关键词：Ohmic contact VANADIUM transmission electron microscopy energy dispersive x-ray spectrum

GaN基p-i-n型雪崩探测器的制备与表征(英文)被引量：2: 《发光学报》2011年第3期262-265,共4页李广如秦志新桑立雯沈波张国义; Projects supported by National Natural Science Foundation of China Grant(10774001,60736033,60876041,60577030)~~; 制备和表征了p-i-n型的GaN基雪崩探测器。器件在-5 V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA。响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量。C-V测...; 关键词：紫外探测器雪崩碰撞电离

Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_(1-x)N/GaN heterostructures at high temperatures: 《Chinese Physics B》2010年第12期478-483,共6页林芳沈波卢励吾马楠许福军苗振林宋杰刘新宇魏珂黄俊; Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041,10774001,60736033,and 60890193);the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607); In contrast with Au/Ni/Al0.25Ga0.75N/GaN Schottky contacts, this paper systematically investigates the effect of thermal annealing of Au/Pt/Alo.25Ga0.75N/GaN structures on electrical properties of the two-dimensional ...; 关键词：gate leakage current high temperature Frenkel-Poole emission

In气氛下晶体生长对Mg掺杂p-AlxGa1-xN激活能的影响: 《发光学报》2010年第1期91-95,共5页张延召秦志新桑立雯许正昱于涛杨子文沈波张国义赵岚张向锋成彩晶孙维国; 国家自然科学基金(10774001,60736033,60776041,60876041);国家重点基础研究发展计划(2006CB604908,2006CB921607);国家“973”计划(TG2007CB307004)资助项目; Ⅲ-Ⅴ族氮化物宽禁带半导体材料体系中,普通方法生长的p型外延层电导率一般都很低,成为了制约器件性能提高的瓶颈。在p-AlxGa1-xN材料中,Mg受主的激活能较大,并且随Al组份增加而增大。通过在p-AlxGa1-xN材料生长过程中引入三甲基铟(TMI...; 关键词：p-AlxGa1-xN In气氛激活能深紫外LED

Optimization of a solar-blind and middle infrared two-colour photodetector using GaN-based bulk material and quantum wells: 《Chinese Physics B》2009年第12期5366-5369,共4页岑龙斌沈波秦志新张国义; Project supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and60628402);National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607);the Research Fundfor the Doctoral Program of Higher Education of China (Grant Nos 200800011021 and 20060001018); This paper calculates the wavelengths of the interband transitions as a function of the Al mole fraction of AlxGa1-xN bulk materml. It is finds that when the Al mole fraction is between 0.456 and 0.639, the wavelength...; 关键词：quantum well two-colour detector intersubband transition

Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells: 《Chinese Physics B》2009年第9期3905-3908,共4页岑龙斌沈波秦志新张国义; supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and 60628402);National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607);the Research Fund for the Doctoral Program of Higher Education in China (Grant Nos 200800011021 and 20060001018);Beijing Natural Science Foundation (Grant No 4062017); The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells （CDQWs） has been investigated by solving SchrSdinger and Poisson equa...; 关键词：A1N/GaN CDQWs electrical-optical modulator intersubband transition

氢化作用对低能电子束辐照下GaN发光演变的影响: 《物理学报》2009年第11期7864-7868,共5页王彦沈波 Dierre Benjamin Sekiguchi Takashi 许福军; 教育部高水平研究生公派出国项目和国家自然科学基金(批准号:10774001;60736033;60890193)资助的课题~~; 结合氢在GaN中的扩散特性,运用阴极荧光(CL)谱,对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究.实验发现,氢化前GaN在低能电子束辐照下带边发光强度呈现衰减的趋势,而氢化后带边发射强度先上升后衰减,而且氢化后的衰减比...; 关键词：阴极荧光低能电子束氢化演变

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