The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is ...
Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then, the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration, -20ns, bul...