国家自然科学基金(51171191)

作品数：3被引量：7H指数：2
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相关期刊：《Acta Metallurgica Sinica(English Letters)》《Journal of Materials Science & Technology》更多>>
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Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package被引量：3
《Journal of Materials Science & Technology》2018年第8期1305-1314,共10页Li-Yin Gao Hao Zhang Cai-Fu Li Jingdong GUO Zhi-Quan Liu 
financially supported by the National Key Research and Development Program of China(Grant No.2017YFB0305501);the National Natural Science Foundation of China(Grant Nos.51401218 and 51171191);the Osaka University Visiting Scholar Program(Grant No.J135104902)
Fe-Ni films with compositions of 73 wt% of Ni and 45 wt% of Ni were used as under bump metallization （UBM） in wafer level chip scale package, and their reliability was evaluated through electromigration （EM） test ...
关键词：Fe-Ni under bump metallization （UBM） Intermetallic compounds （IMCs） Electromigration （EM） Diffusion Vacancy formation 
Thermal Performance of Low-Melting-Temperature Alloy Thermal Interface Materials被引量：4
《Acta Metallurgica Sinica(English Letters)》2014年第2期290-294,共5页E.Yang Hongyan Guo Jingdong Guo Jianku Shang Mingguang Wang 
supported by the National Basic Research Program of China (No.2010CB631006);the National Natural Science Foundation of China (No.51171191)
Thermal resistance of low-melting-temperature alloy （LMTA） thermal interface materials （TIMs） was measured by laser flash method before and after different stages of heating. The results showed that the thermal pe...
关键词：Thermal interface materials Low melting point alloy Thermal resistance 
Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining
《Journal of Materials Science & Technology》2011年第11期1072-1076,共5页X.F. Zhang H.Y. Liu J.D. Guo J.K. Shang 
supported by the National Natural Science Foundation of China (Grant No. 51171191);the National Basic Research Program of China (Grant No. 2010CB631006);the Natural Science Foundation of Liaoning Province, China (Grant No. 20092076)
Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prest...
关键词：ELECTROMIGRATION Interfacial segregation PRESTRAIN DISLOCATION VACANCY 
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