supported by National Natural Science Foundation of China(Nos.10675023,11075018);the Fundamental Research Funds for the Central Universities of China
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10^10 cm^-2, 1 × 10^11 cm^-2,1 × 10^12 cm^-2, and 1 × 10^13 cm^-2. Their performance degradation is anal...
supported by the National Natural Science Foundation of China (Grant Nos. 10675023 and 11075018);the Fundamental Research Funds for the Central Universities
Displacement damage dose (Dd) approach was applied to analyze the electron irradiation-induced degradation of GaInP/ GaAs/Ge space solar cells by effective 1 MeV electron Dd, the electron irradiation-induced maximum p...