云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2006CB921607)

国家重点基础研究发展计划(2006CB921607): 作品数：18被引量：14H指数：2; 导出分析报告; 相关作者：张国义胡晓东李睿陈伟华廖辉更多>>; 相关机构：北京大学中国科学院更多>>; 相关期刊：《半导体光电》《北京大学学报（自然科学版）》《Chinese Physics B》《Chinese Physics Letters》更多>>; 相关主题：GANXGAAL紫外超晶格更多>>; 相关领域：理学电子电信更多>>

基于背向曝光的GaN基脊型LD制备工艺改进: 《半导体光电》2012年第4期503-506,共4页鲁辞莽王磊孟令海王建玲康香宁胡晓东; 国家自然科学基金项目(61076013;60776042);国家"863"计划项目(2007AA03Z403);国家"973"计划项目(2006CB921607); GaN基脊型激光二极管(LD)的制备工艺中,面临的一个主要困难是p电极和窄脊结构的制备受到光刻对准精度的严重制约。设计和验证了一种基于背向曝光技术的激光器制备工艺。通过预先沉积一层200nm的铝作为挡光掩模和牺牲层,利用ICP蚀刻制备...; 关键词：激光器脊型背向曝光掩埋金属层

Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer: 《Chinese Physics Letters》2011年第9期198-200,共3页GUO Yu-Bing CHEN Yong-Hai XIANG Ying QU Sheng-Chun WANG Zhan-Guo; by the National Natural Science Foundation of China(60625402,60990313);the 973 programme(2006CB604908,2006CB921607).; We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering(FLS)experiment for a cell with ZnO nanorod doped in only one poly(vinyl alcohol)(PVA)layer.When...; 关键词：SCATTERING PHOTOREFRACTIVE CRYSTAL

Intersubband transitions in Al_(0.82)In_(0.18)N/GaN single quantum well: 《Chinese Physics B》2011年第9期226-231,共6页王宇宙李丁李磊刘宁炀刘磊曹文彧陈伟华胡晓东; Project supported by the National High Technology Research and Development Program of China (Grant No.2007AA03Z403);the National Natural Science Foundation of China (Grant Nos.61076013 and 60776042);the National Basic Research Program of China (Grant No.2006CB921607); The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the ...; 关键词：Alo.s2Ino.lsN/GaN single quantum well optoelectronic devices MID-INFRARED intersub-band transition

Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_(1-x)N/GaN heterostructures被引量：1: 《Chinese Physics B》2011年第7期393-398,共6页林芳沈波卢励吾刘新宇魏珂许福军王彦马楠黄俊; Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,10774001,60736033,and 60890193);the National Basic Research Program of China (Grant Nos.2006CB604908 and 2006CB921607); By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1...; 关键词：inductively coupled plasma subsequent annealing defect state

Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al_(0.4)Ga_(0.6)N: 《Chinese Physics B》2011年第4期369-373,共5页李涛秦志新许正昱沈波张国义; supported by the National Natural Science Foundation of China (Grant Nos. 10774001,60736033,60876041 and 60577030);National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607);the National Key Basic Research and Development Program of China (973 Project) (Grant No. TG2007CB307004); This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au （15 nm/85 nm/20 nm/95 nm） contacts on n-A10.4Ga0.6N. Contacts annealed at 700 ℃ and higher temperatures show Ohmic...; 关键词：Ohmic contact VANADIUM transmission electron microscopy energy dispersive x-ray spectrum

Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_(1-x)N/GaN heterostructures at high temperatures: 《Chinese Physics B》2010年第12期478-483,共6页林芳沈波卢励吾马楠许福军苗振林宋杰刘新宇魏珂黄俊; Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041,10774001,60736033,and 60890193);the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607); In contrast with Au/Ni/Al0.25Ga0.75N/GaN Schottky contacts, this paper systematically investigates the effect of thermal annealing of Au/Pt/Alo.25Ga0.75N/GaN structures on electrical properties of the two-dimensional ...; 关键词：gate leakage current high temperature Frenkel-Poole emission

Strain effects on optical polarisation properties in (11■2) plane GaN films: 《Chinese Physics B》2010年第11期542-547,共6页郝国栋陈涌海范亚明黄晓辉王怀兵; Project supported by the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607);the National Natural Science Foundation of China (Grant Nos. 60625402,60990313 and 60990311); We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the （11^-22）-plane. The calculations are performed by the k.p perturbation theory approach through u...; 关键词：GAN （11-22）-plane STRAIN optical anisotropy

In气氛下晶体生长对Mg掺杂p-AlxGa1-xN激活能的影响: 《发光学报》2010年第1期91-95,共5页张延召秦志新桑立雯许正昱于涛杨子文沈波张国义赵岚张向锋成彩晶孙维国; 国家自然科学基金(10774001,60736033,60776041,60876041);国家重点基础研究发展计划(2006CB604908,2006CB921607);国家“973”计划(TG2007CB307004)资助项目; Ⅲ-Ⅴ族氮化物宽禁带半导体材料体系中,普通方法生长的p型外延层电导率一般都很低,成为了制约器件性能提高的瓶颈。在p-AlxGa1-xN材料中,Mg受主的激活能较大,并且随Al组份增加而增大。通过在p-AlxGa1-xN材料生长过程中引入三甲基铟(TMI...; 关键词：p-AlxGa1-xN In气氛激活能深紫外LED

Optimization of a solar-blind and middle infrared two-colour photodetector using GaN-based bulk material and quantum wells: 《Chinese Physics B》2009年第12期5366-5369,共4页岑龙斌沈波秦志新张国义; Project supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and60628402);National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607);the Research Fundfor the Doctoral Program of Higher Education of China (Grant Nos 200800011021 and 20060001018); This paper calculates the wavelengths of the interband transitions as a function of the Al mole fraction of AlxGa1-xN bulk materml. It is finds that when the Al mole fraction is between 0.456 and 0.639, the wavelength...; 关键词：quantum well two-colour detector intersubband transition

Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells: 《Chinese Physics B》2009年第9期3905-3908,共4页岑龙斌沈波秦志新张国义; supported by the National Natural Science Foundation of China (Grant Nos 60806042,10774001,60736033,60890193 and 60628402);National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607);the Research Fund for the Doctoral Program of Higher Education in China (Grant Nos 200800011021 and 20060001018);Beijing Natural Science Foundation (Grant No 4062017); The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical A1N/GaN coupled double quantum wells （CDQWs） has been investigated by solving SchrSdinger and Poisson equa...; 关键词：A1N/GaN CDQWs electrical-optical modulator intersubband transition

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