国家自然科学基金(61274041)

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Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE
《Chinese Physics B》2016年第4期418-421,共4页韩东岳 李辉杰 赵桂娟 魏鸿源 杨少延 汪连山 
supported by the National Natural Science Foundation of China(Grant Nos.61504128,61504129,61274041,and 11275228);the National Basic Research Program of China(Grant No.2012CB619305);the National High Technology Research and Development Program of China(Grant Nos.2014AA032603,2014AA032609,and 2015AA010801);the Guangdong Provincial Scientific and Technologic Planning Program,China(Grant No.2014B010119002)
The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN f...
关键词：metalorganic chemical vapor deposition nitrides semiconducting III-V materials semiconduct- ing ternary compounds 
Effect of the thickness of InGaN interlayer on a-plane GaN epilayer
《Chinese Physics B》2015年第2期357-361,共5页王建霞 汪连山 张谦 孟祥岳 杨少延 赵桂娟 李辉杰 魏鸿源 王占国 
supported by the National Natural Science Foundation of China(Grant Nos.91233111,61274041,and 11275228);the Special Funds for Major State Basic Research Project of China(Grant No.2012CB619305);the National High Technology R&D Program of China(Grant Nos.2014AA032603 and2014AA032609);the Guangdong Provincial Special Fund for LED Industrial Development,China(Grant No.2012A080302003)
In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obta...
关键词：non-polar a-plane GaN InGaN interlayer peel-off metalorganic chemical vapor deposition 
Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer
《Chinese Physics B》2014年第2期14-18,共5页王建霞 汪连山 杨少延 李辉杰 赵桂娟 张恒 魏鸿源 焦春美 朱勤生 王占国 
Project supported by the National Natural Science Foundation of China (Grant Nos.91233111,61274041,11275228,61006004,and 61076001);the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No.2012CB619305);the 863 High Technology R&D Program of China (Grant No.2011AA03A101);the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No.2012A080302003)
The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of ba...
关键词：V/III ratio a-plane GaN InGaN interlayer metalorganic chemical vapor deposition 
Mobility limited by cluster scattering in ternary alloy quantum wires
《Chinese Physics B》2014年第1期407-411,共5页张恒 杨少延 刘贵鹏 王建霞 金东东 李辉杰 刘祥林 朱勤生 王占国 
Project supported by the National Natural Science Foundation of China(Grant Nos.91233111,61274041,11275228,61006004,and 61076001);the National Basic Research Program of China(Grant No.2012CB619305);the High Technology R&D Program of China(Grant No.2011AA03A101)
The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire （QWR） is theoretically inves- tigated under Born approximation. We calculate the screened mobility due to clusters （high indium...
关键词：MOBILITY cluster scattering quantum wire one-dimensional electron gas 
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