国家自然科学基金(51272008)

作品数：3被引量：1H指数：1
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相关期刊：《Chinese Optics Letters》《Chinese Physics B》更多>>
相关主题：LASER_DIODEQUANTUM_WELLSINGANCONFINEDSTARK更多>>
相关领域：电子电信理学更多>>
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Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of In GaN/GaN quantum wells in laser diode structures被引量：1
《Chinese Optics Letters》2016年第6期55-59,共5页曹文彧 胡晓东 
supported by the National Natural Science Foundation of China(Nos.61334005,51272008,and51102003);the National Basic Research Program of China(No.2012CB619304)
Measurements of the excitation power-dependence and temperature-dependence photoluminescence（PL） are performed to investigate the emission mechanisms of In Ga N/Ga N quantum wells（QWs） in laser diode structures. T...
关键词：confined Stark piezoelectric excitation thermally partially tempera fitting screening attributed 
Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure
《Chinese Physics B》2013年第7期415-419,共5页曹文彧 贺永发 陈钊 杨薇 杜为民 胡晓东 
Project supported by the National Basic Research Program of China(Grant No.2012CB619304);the National Natural Science Foundation of China(Grant Nos.61076013 and 51272008);the Beijing Municipal Science and Technology Project,China(Grant No.H030430020000)
The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection curr...
关键词：ELECTROLUMINESCENCE quantum-confined Stark effect InGaN/GaN quantum wells laser diode 
Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters
《Chinese Physics B》2013年第4期482-485,共4页杨薇 武翌阳 刘宁炀 刘磊 陈钊 胡晓东 
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51272008, and 51102003);the National Basic Research Program of China (Grant No. 2012CB619304);the Beijing Municipal Science & Technology Commission (Grant No. D111100001711002);the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014)
We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet （374 nm） to green （536 nm） with InN...
关键词：InN ultra-thin layer spontaneous emission spectra GAIN laser diodes 
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