国家自然科学基金(s61204006)

作品数：2被引量：1H指数：1
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相关期刊：《Chinese Physics B》更多>>
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Semipolar(1122) and polar(0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
《Chinese Physics B》2017年第2期467-472,共6页Sheng-Rui Xu Ying Zhao Ren-Yuan Jiang Teng Jiang Ze-Yang Ren Jin-Cheng Zhang Yue Hao 
Project supported by the National Natural Science Foundation of China(Grant Nos.61204006 and 61574108);the Fundamental Research Funds for the Central Universities,China(Grant No.7214570101)
High indium semipolar（1122） and polar（0001） In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The m...
关键词：semipolar GaN MOCVD 
Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer被引量：1
《Chinese Physics B》2014年第3期489-492,共4页温慧娟 张进成 陆小力 王之哲 哈微 葛莎莎 曹荣涛 郝跃 
Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant Nos.2011ZX01002-002 and 2013ZX02308-002);the Fundamental Research Funds for the Central Universities of Ministry of Education of China;the National Natural Science Foundation of China(Grant Nos.61204006 and 61106063)
The quality of an A1GaN channel heterojunction on a sapphire substrate is massively improved by using an A1- GaN/GaN composite buffer layer. We demonstrate an A10.4Gao.6N/AI0.18Ga0.82N heterojunction with a state-of-t...
关键词：AlGaN channel HETEROJUNCTION MOBILITY electrical properties 
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