supported by the National Basic Research Program of China(2010CB327504 and 2011CB301900);the National Natural Science Foundation of China(60825401 and60936004);the Fundamental Research Funds for the Central Universities(JUSRP51323B);the National Science Foundation of Jiangsu Province(BK2012110)
The reverse leakage characteristics of AlGaNbased ultraviolet light-emitting diodes fabricated on sapphire substrate are studied by temperature-variable current–voltage(I–V)measurement from 300 to 450 K.At low-rever...
Project supported by the State Key Program for Basic Research of China (Grant Nos. 2010CB327504, 2011CB301900, and 2011CB922100);the National Natural Science Foundation of China (Grant Nos. 60825401, 60936004, and 11104130);the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012110, BK2011556, and BK2011050)
The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as te...