Project supported by the National Natural Science Foundation of China(Grant No.61204044)
The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received dig...
Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical ...
supported by the National Natural Science Foundation of China(No.61204044)
In high speed three-dimensional integrated circuits (3D ICs), through silicon via (TSV) insertion causes impedance discontinuities along the interconnect-TSV channel that results in signal reflection. As demonstra...
supported by the National Natural Science Foundation of China(Nos.61234002,61006028,61204044);the National High-Tech Program of China(Nos.2012AA012302,2013AA011203)
Metallic carbon nanotubes (CNTs) have been proposed as a promising alternative to Cu interconnects in future integrated circuits (ICs) for their remarkable conductive, mechanical and thermal properties. Compact eq...