国家自然科学基金(61204044)

作品数:4被引量:7H指数:2
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相关期刊:《Chinese Physics B》《Journal of Semiconductors》更多>>
相关主题:THREE-DIMENSIONALHIGH_SPEEDDRIVERDESIGN_FORTSV更多>>
相关领域:电子电信一般工业技术更多>>
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Reduction of signal reflection along through silicon via channel in high-speed three-dimensional integration circuit被引量:1
《Chinese Physics B》2014年第3期583-590,共8页刘晓贤 朱樟明 杨银堂 王凤娟 丁瑞雪 
Project supported by the National Natural Science Foundation of China(Grant No.61204044)
The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received dig...
关键词:three-dimensional integrated circuit through silicon via channel signal reflection S-PARAMETERS 
Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits被引量:3
《Chinese Physics B》2014年第3期591-596,共6页钱利波 朱樟明 夏银水 丁瑞雪 杨银堂 
Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical ...
关键词:three-dimensional integrated circuits through-silicon-via crosstalk driver sizing via shielding 
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips被引量:3
《Journal of Semiconductors》2014年第1期121-128,共8页刘晓贤 朱樟明 杨银堂 王凤娟 丁瑞雪 
supported by the National Natural Science Foundation of China(No.61204044)
In high speed three-dimensional integrated circuits (3D ICs), through silicon via (TSV) insertion causes impedance discontinuities along the interconnect-TSV channel that results in signal reflection. As demonstra...
关键词:3D integration TSV signal reflection impedance matching S-PARAMETER 
Circuit modeling and performance analysis of SWCNT bundle 3D interconnects
《Journal of Semiconductors》2013年第9期171-177,共7页钱利波 朱樟明 丁瑞雪 杨银堂 
supported by the National Natural Science Foundation of China(Nos.61234002,61006028,61204044);the National High-Tech Program of China(Nos.2012AA012302,2013AA011203)
Metallic carbon nanotubes (CNTs) have been proposed as a promising alternative to Cu interconnects in future integrated circuits (ICs) for their remarkable conductive, mechanical and thermal properties. Compact eq...
关键词:three-dimensional integrated circuits (3D ICs) carbon nanotube (CNT) signal delay repeater inser-tion 
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