国家自然科学基金(s60806010)

作品数：4被引量：3H指数：1
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相关期刊：《Journal of Semiconductors》更多>>
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Reset noise reduction through column-level feedback reset in CMOS image sensors
《Journal of Semiconductors》2011年第2期137-141,共5页李斌桥 徐江涛 谢爽 孙忠岩 
Project supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Research Fund for the Doctoral Program of Higher Education of China(No.200800561111)
A low reset noise CMOS image sensor （CIS） based on column-level feedback reset is proposed. A feedback loop was formed through an amplifier and a switch. A prototype CMOS image sensor was developed with a 0.18μm CI...
关键词：CMOS image sensor reset noise feedback reset five-transistor pixel global shutter 
Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor被引量：3
《Journal of Semiconductors》2010年第9期59-63,共5页于俊庭 李斌桥 于平平 徐江涛 牟村 
supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Tianjin Innovation Special Funds for science and Technology,China(No.05FZZDGX00200)
Pixel image lag in a 4-T CMOS image sensor is analyzed and simulated in a two-dimensional model.Strategies of reducing image lag are discussed from transfer gate channel threshold voltage doping adjustment,PPD N-type ...
关键词：image lag two-dimensional simulation doping dose implant tilt CMOS image sensor 
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor
《Journal of Semiconductors》2010年第7期53-56,共4页李斌桥 于俊庭 徐江涛 于平平 
Project supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Tianjin Innovation Special Funds for science and Technology,China(No.05FZZDGX00200).
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well struct...
关键词：pinch-off voltage CMOS image sensor photon shot noise pixel design 
Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis
《Journal of Semiconductors》2010年第5期73-77,共5页李斌桥 孙忠岩 徐江涛 
supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Tianjin Innovation Special Funds for Science and Technology,China(No.05FZZDGX00200).
A wide-dynamic-range CMOS image sensor（CIS） based on synthesis of a long-time and a short-time exposure signal in the floating diffusion（FD） of a five-transistor active pixel is proposed.With optimized pixel opera...
关键词：CMOS image sensor double exposure dynamic range five-transistor active pixel 
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