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国家自然科学基金(60566002): 作品数：16被引量：25H指数：4; 导出分析报告; 相关作者：班士良哈斯花张敏温淑敏白鲜萍更多>>; 相关机构：内蒙古大学更多>>; 相关期刊：《Chinese Physics B》《物理学报》《Journal of Semiconductors》《内蒙古大学学报（自然科学版）》更多>>; 相关主题：STRAINEDHETEROJUNCTION本征值本征态QUANTUM_WELL更多>>; 相关领域：理学电子电信更多>>

Screening influence on the Stark effect of impurity states in strained wurtzite GaN/Al_xGa_(1-x)N heterojunctions under pressure被引量：1: 《Chinese Physics B》2009年第12期5437-5442,共6页张敏班士良; Project supported by the National Natural Science Foundation of China (Grant No 60566002);the Specialized Research Fundfor the Doctoral Program of Higher Education of China (Grant No 20070126001); The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/AlxGa1-xN heterojunctions under hydrostatic pressure and an external electric field is inv...; 关键词：strained wurtzite heterojunction Stark effect SCREENING pressure

Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/Al_xGa_(1-x)N heterojunction被引量：4: 《Chinese Physics B》2009年第10期4449-4455,共7页张敏班士良; Project supported by the National Natural Science Foundation of China (Grant No 60566002); A variational method is adopted to investigate the properties of shallow impurity states near the interface in a free strained wurtzite GaN/AlxGa1-xN heterojunction under hydrostatic pressure and external electric fie...; 关键词：GAN/ALXGA1-XN strain PRESSURE Stark effect binding energy of impurity state

Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure被引量：1: 《Journal of Semiconductors》2009年第8期4-9,共6页周晓娟班士良; supported by the National Natural Science Foundation of China (No.60566002);the Specialized Research Fund for the Doctoral Program of Higher Education (No.20070126001); A variational method combined with solving the force balance equation is adopted to investigate the influence of strain and hydrostatic pressure on electronic mobility in a strained wurtzite AlN/GaN heterojunction by ...; 关键词：hydrostatic pressure strained AlN/GaN heterojunction electronic mobility optical-phonon scattering

Temperature effects on interface polarons in a strained(111)-oriented zinc-blende GaN/AlGaN heterojunction under pressure被引量：1: 《Journal of Semiconductors》2009年第3期9-14,共6页张敏班士良; supported by the National Natural Science Foundation of China (No. 60566002);the Specialized Research Fund for the Docto-ral Program of Higher Education of China (No. 20070126001).; The properties of interface polarons in a strained （111）-oriented zinc-blende GaN/AlxGa1-xN heterojunction at finite temperature under hydrostatic pressure are investigated by adopting a modified LLP variational met...; 关键词：POLARON strained zinc-blende heterojunction temperature pressure

Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn_(1-x)Cd_xSe strained heterojunction: 《Chinese Physics B》2008年第12期4606-4613,共8页白鲜萍班士良; Project supported by the National Natural Science Foundation (Grant No 60566002);the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No 20070126001) of China; With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1-xCdxSe strained heterojunction under hydrostatic pressure by considering the intersubband and in...; 关键词：electron mobility ZnSe/Zn1-xCdxSe strain pressure effect

流体静压力下磁场对半导体异质结中束缚极化子的影响(英文): 《内蒙古大学学报（自然科学版）》2008年第5期518-525,共8页王树涛班士良张敏; Work funded by the National Natural Science Foundation of China(60566002);the Specialized Research Fund for the Doctoral Program of Higher Education(Grant No.20070126001)of China~~; 对GaAs/AlxGa1-xAs半导体异质结系统,引入实际异质结势,同时考虑体纵光学(LO)声子和两支界面光学(IO)声子的影响,采用变分法讨论了外界磁场和压力对束缚极化子的影响.利用改进的Lee-Low-Pines(LLP)中间耦合方法处理电子-声子和杂质-声...; 关键词：磁场压力束缚极化子结合能

光学声子散射对纤锌矿AlN/GaN异质结中电子迁移率的影响: 《内蒙古大学学报（自然科学版）》2008年第3期263-268,共6页周晓娟班士良; 国家自然科学基金资助项目(60566002);内蒙古自治区优秀学科带头人计划项目; 考虑导带弯曲和有限高势垒,利用变分法和力平衡方程研究了界面光学声子和半空间光学声子散射对纤锌矿AlN/GaN异质结中二维电子气(2DEG)迁移率的影响,数值计算了各支光学声子作用下迁移率随电子面密度及温度的变化.结果表明:总迁移率随...; 关键词：AlN/GaN异质结电子迁移率光学声子散射

应变闪锌矿(001)取向GaN/AlGaN量子阱中受屏蔽激子的压力效应被引量：1: 《内蒙古大学学报（自然科学版）》2008年第3期269-274,共6页哈斯花班士良; 国家自然科学基金资助项目(60566002);内蒙古自治区优秀学科带头人计划项目; 采用变分法与自洽计算相结合的方法讨论了在电子-空穴气体屏蔽影响下应变闪锌矿(001)取向GaN/AlxGa1-xN量子阱中激子结合能的压力效应.结果表明,若考虑压力对双轴及单轴应变的调制以及禁带宽度、有效质量和介电常数等参数的影响,激子结...; 关键词：应变闪锌矿量子阱激子结合能电子-空穴气屏蔽压力

压力下应变异质结中施主杂质态的Stark效应被引量：4: 《物理学报》2008年第7期4459-4465,共7页张敏班士良; 国家自然科学基金(批准号:60566002,10564003)资助的课题~~; 对应变GaN/AlxGa1-xN异质结系统,考虑理想界面突变势垒,引入简化相干势近似,采用变分法讨论了流体静压力下外界电场对束缚于界面附近的浅杂质态结合能的影响.对GaN为衬底的闪锌矿应变异质结,分别计算了(001)和(111)取向时杂质态的结合...; 关键词：GaN/AlxGa1-xN异质结杂质态压力 STARK效应

Binding Energies of Screened Excitons in a Strained(111)-Oriented Zinc-Blende GaN/AlGaN Quantum Well Under Hydrostatic Pressure被引量：6: 《Journal of Semiconductors》2008年第2期234-239,共6页哈斯花班士良; 国家自然科学基金(批准号:60566002);内蒙古自治区优秀学科带头人计划资助项目~~; We investigate the binding energies of excitons in a strained （111）-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole （e-h） gas under hydrostatic pressure by combining a variational...; 关键词：EXCITON strained zinc-blende quantum well pressure screened effect

国家自然科学基金(60566002)