Project supported by the National Key Research and Development Program of China(No.2016YFB0402404);the High-Tech Research and Development Program of China(Nos.2013AA031401,2015AA016902,2015AA016904);the National Natural Foundation of China(Nos.61674136,61435002,61176053,61274069)
We present the design of a diffractive grating structure and get the optimal parameters which can achieve more than 75%coupling efficiency(CE) between single-mode fiber and silicon-on-insulator(SOI) waveguide thro...
Project supported by the National Key Research and Development Program of China(No.2016YFB0402404);the High-Tech Research and Development Program of China(Nos.2013AA031401,2015AA016902,2015AA016904);the National Natural Foundation of China(Nos.61674136,61176053,61274069,61435002)
Graphene field-effect transistors have been intensively studied.However,in order to fabricate devices with more complicated structures,such as the integration with waveguide and other two-dimensional materials,we need...
Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0402404);the High-Tech Research and Development Program of China(Grant Nos.2013AA031401,2015AA016902,and 2015AA016904);the National Natural Science Foundation of China(Grant Nos.61674136,61176053,61274069,and 61435002)
Recently, graphene-based photodetectors have been rapidly developed. However, their photoresponsivities are generally low due to the weak optical absorption strength of graphene. In this paper, we fabricate photocondu...
Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0402204);the High-Tech Research and Development Program of China(Grant Nos.2013AA031401,2015AA016902,and 2015AA016904);the National Natural Science Foundation of China(Grant Nos.61674136,61176053,61274069,and 61435002)
Graphene is an alternative material for photodetectors owing to its unique properties.These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes....
Project supported by the High-Tech Research and Development Program of China(Nos.2015AA016904,2015AA012302);the National Basic Research Program of China(Nos.2012CB933503,2013CB932904);the National Natural Foundation of China(Nos.61274069,61176053,61021003,61435002)
This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene (DVS-BCB) adhesive bond...