国家自然科学基金(s60506001)

作品数：2被引量：2H指数：1
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GaN-based violet laser diodes grown on free-standing GaN substrate
《Chinese Physics B》2009年第12期5350-5353,共4页张立群 张书明 江德生 王辉 朱建军 赵德刚 刘宗顺 杨辉 
Project supported by the National Natural Science Foundation of China (Grant Nos 60506001,60776047,60476021,60576003 and 60836003);the National Basic Research Programme of China (Grant No 2007CB936700)
A violet laser diode （LD） structure is grown on a free-standing c-plane GaN substrate and 4 μm×800μm ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet...
关键词：GaN laser diode mounting configuration active region temperature 
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates被引量：2
《Chinese Physics B》2009年第10期4413-4417,共5页吴玉新 朱建军 赵德刚 刘宗顺 江德生 张书明 王玉田 王辉 陈贵锋 杨辉 
Project supported by the National Natural Science Foundation of China (Grant Nos 60506001, 60476021, 60576003, 60776047 and 60836003);the National Basic Research Program of China (Grant No 2007CB936700);Project of Technological Research and Development of Hebei Province (Grant No 07215134)
High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single A1GaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si （111） substrate by metalorganic chemical va...
关键词：GAN Si （111） substrate metalorganic chemical vapor deposition AlGaN interlayer 
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