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国家自然科学基金(10974077): 作品数：39被引量：58H指数：4; 导出分析报告; 相关作者：李清山赵银女张立春董艳锋张易军更多>>; 相关机构：鲁东大学曲阜师范大学烟台大学更多>>; 相关期刊：《光子学报》《发光学报》《物理学报》《光电子．激光》更多>>; 相关主题：ELECTRONIC_STRUCTUREOPTICAL_PROPERTIESN-DOPEDGA光学性能更多>>; 相关领域：理学电子电信一般工业技术更多>>

Electronic structures and optical properties of Nb-doped SrTiO_3 from first principles: 《Journal of Semiconductors》2016年第7期12-16,共5页焦淑娟闫金良孙桂鹏赵银女; Project supported by the National Natural Science Foundation of China(No.10974077);the Innovation Project of Shandong Graduate Education,China(No.SDYY13093); The n-type Nb-doped SrTiO3 with different doping concentrations were studied by first principles cal- culations. The effects of Nb concentration on the formation enthalpy, electronic structure and optical property wer...; 关键词：semiconductor doping electric property optical property electronic structure

Electronic structure and optical properties of F-doped β-Ga_2O_3 from first principles calculations被引量：2: 《Journal of Semiconductors》2016年第4期17-23,共7页闫金良曲崇; Project supported by the Innovation Project of Shandong Graduate Education,China(No.SDYY13093);the National Natural Science Foundation of China(No.10974077); The effects of F-doping concentration on geometric structure, electronic structure and optical property of β-GaOwere investigated. All F-doped β-GaOwith different concentrations are easy to be formed under Ga-rich c...; 关键词：semiconductor electronic structure optical property F-doped β-Ga_2O_3

Electronic structure and optical property of p-type Zn-doped SnO_2 with Sn vacancy被引量：2: 《Journal of Semiconductors》2016年第2期39-44,共6页孙桂鹏闫金良牛培江孟德兰; supported by the National Natural Science Foundation of China(No.10974077);the Innovation Project of Shandong Graduate Education,China(No.SDYY13093); The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn va- cancy （Vsn） and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is...; 关键词：Sn02 crystal zinc doping tin vacancy electronic structure optical property

氧分压对ZnO:Eu^(3+),Li^+薄膜结构和光学性质的影响被引量：1: 《中国稀土学报》2015年第6期676-681,共6页董艳锋李清山; 国家自然科学基金资助项目(10974077);曲阜师范大学博士启动基金(2012052); 利用脉冲激光沉积(PLD)法在Si(111)衬底上制备了ZnO:Eu^(3+),Li+薄膜,分别通过XRD谱和光致发光(PL)谱测试研究了氧分压不同时薄膜结构和发光性质。XRD谱研究表明,所有样品均仅出现ZnO基质的(002)衍射峰,说明Eu^(3+)已进入ZnO基质晶格,...; 关键词：ZnO:EU3+ Li+薄膜脉冲激光沉积 XRD 光致发光

Transparent and conductive PEDOT:PSS/Ag NW/PEDOT:PSS hybrid films prepared by spin-coating at room temperature: 《Journal of Semiconductors》2015年第12期48-52,共5页岳情情闫金良孟德兰; supported by the National Natural Science Foundation of China(No.10974077);the Innovation Project of Shandong Graduate Education,China(No.SDYY13093); PEDOT：PSS/Ag NW/PEDOT：PSS hybrid films were deposited on PET substrates by the spin coating technique at room temperature. The optical transmittance, sheet resistance, crystallization and surface morphology were cha...; 关键词：transparent conductive film sheet resistance TRANSMITTANCE silver nanowires hybrid films

Effects of N concentration on electronic and optical properties of N-doped PbTiO_3被引量：1: 《Journal of Semiconductors》2015年第9期36-40,共5页赵银女闫金良; Project supported by the National Natural Science Foundation of China(No.10974077);the Innovation Project of Shandong Graduate Education,China(No.SDYY13093); The p-type N-doped PbTiO3 with different doping concentrations have been studied by first-principles calculations. The charge density differences, band structures, density of states and optical properties have been in...; 关键词：semiconductor doping electric property optical property electronic structure

First-principles study of n-type tin/fluorine co-doped beta-gallium oxides被引量：1: 《Journal of Semiconductors》2015年第8期21-25,共5页赵银女闫金良; supported by the National Natural Science Foundation of China(No.10974077);the Innovation Project of Shandong Graduate Education,China(No.SDYY13093); Defect formation energies, electronic structures and optical properties of Sn-doped β-GazO3, F-doped β-Ga2O3, and Sn/F co-doped β-Ga2O3 were calculated using the first-principles. The calculated results of the pure...; 关键词：semiconductor doping electric properties optical properties electronic structure

退火温度对透明导电Ga_2O_3/ITO周期多层膜性能的影响: 《材料科学与工程学报》2015年第4期559-563,共5页赵银女; 国家自然科学基金资助项目(10974077);山东省研究生教育创新计划资助项目(SDYY13093); 用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO靶材在石英玻璃衬底制备Ga2 O3 /ITO周期多层膜.样品在300～800℃真空退火1小时,研究退火温度对薄膜光学和电学性能的影响.400℃退火的Ga2O3/ITO周期多层膜面电阻和电阻率低至68.76Ω/□和...; 关键词：磁控溅射多层膜透明导电膜退火光学性质电学性质

用第一性原理研究Ti掺杂β-Ga_2O_3的电子结构和光学性能(英文)被引量：3: 《材料科学与工程学报》2015年第4期484-489,共6页孟德兰闫金良牛培江; supported by the National Natural Science Foundation of China(10974077);the Innovation Project of Shandong Graduate Education,China(SDYY13093); 用GGA+U的方法研究了本征β-Ga2O3和Ti掺杂β-Ga2O3的电子结构和光学性能。晶格常数的计算值与实验值差别小于1%,本征β-Ga2O3的带隙计算值4.915eV,与实验值4.9eV一致。Ti替位Ga(1)位置和Ti替位Ga(2)位置的β-Ga2O3的价带最大值和导带...; 关键词：第一性原理 Ti掺杂β—Ga2O3 电子结构光学性能

氧空位对Ga_(1.5)In_(0.5)O_3透明导电氧化物性能的影响被引量：2: 《材料科学与工程学报》2015年第3期396-400,共5页赵银女; 国家自然科学基金资助项目(10974077);山东省研究生教育创新计划资助项目(SDYY13093); Ga1.5In0.5O3是一种潜在的紫外透明导电材料。用第一性原理计算了含氧空位的Ga1.5In0.5O3的结构参数、生成焓、能带结构、态密度、光吸收和光反射。氧空位的位置影响Ga1.5In0.5O3化合物的晶格常数和生成焓,含氧空位的Ga1.5In0.5O3是间...; 关键词：Ga2(1-x)In2xO3化合物氧空位电子结构第一性原理

国家自然科学基金(10974077)