云南高校图书馆联盟文献共享服务平台- ANNEALING

ANNEALING: 作品数：1092被引量：1500H指数：13; 导出分析报告; 相关领域：一般工业技术金属学及工艺理学更多>>; 相关作者：张玉明张义门杨林安赵有文余金中更多>>; 相关机构：清华大学中国科学院东北大学浙江大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Tuning Surface Spin Polarization of CoFeB by Boron Diffusion Detected by Spin Resolved Photoemission: 《Chinese Physics Letters》2023年第8期86-91,共6页Qi Liu Xianyang Lu Chengrui Fu Jiarui Chen Zhe Zhang Yuting Gong Xinyue Wang Yu Yan Qinwu Gao Hui Li Xuezhong Ruan Yao Li Jun Du Jing Wu Liang He Bo Liu Rong Zhang Yongbing Xu; supported by the National Key Research and Development Program of China(Grant No.2021YFB3601600);the National Natural Science Foundation of China(Grant Nos.12104216,61427812,11774160,51971109,51871236,51771053,U1806219);the Natural Science Foundation of Jiangsu Province of China(Grant Nos.BK20200307,BK20192006,BK20180056);the Fundamental Research Funds for the Central Universities(Grant No.21014380113)。; Research of spin polarization of magnetic CoFeB thin films is of practical importance in spintronic applications.Here,using a direct characterization technique of spin-resolved photoemission spectroscopy,we obtain the...; 关键词：SPECTROSCOPY ANNEALING BORON

Continuously Doping Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)into Electron-Doped Superconductor by CaH_(2)Annealing Method: 《Chinese Physics Letters》2022年第7期93-97,共5页Jin Zhao Yu-Lin Gan Guang Yang Yi-Gui Zhong Cen-Yao Tang Fa-Zhi Yang Giao Ngoc Phan Qiang-Tao Sui Zhong Liu Gang Li Xiang-Gang Qiu Qing-Hua Zhang Jie Shen Tian Qian Li Lu Lei Yan Gen-Da Gu Hong Ding; supported by the National Natural Science Foundation of China(Grant Nos.11888101 and U1832202);the Chinese Academy of Sciences(Grant Nos.QYZDB-SSWSLH043 and XDB33000000);the K.C.Wong Education Foundation(Grant No.GJTD-2018-01);the Informatization Plan of Chinese Academy of Sciences(Grant No.CAS-WX2021SF-0102);supported by the Synergetic Extreme Condition User Facility(SECUF);supported by China Postdoctoral Science Foundation(Grant Nos.2020M680726 and YJ20200325);supported by US DOE(Grant Nos.DE-SC0010526 and DE-SC0012704)。; As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of...; 关键词：into Electron-Doped Superconductor by CaH_(2)Annealing Method Continuously Doping Bi_(2)Sr_(2)CaCu_(2)O

Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization: 《Chinese Physics Letters》2021年第6期72-75,共4页Lili Han Chunhua Du Ziguang Ma Yang Jiang Kanglin Xiong Wenxin Wang Hong Chen Zhen Deng Haiqiang Jia; Supported by the National Natural Science Foundation of China(Grant Nos.62004218,61704008,61804176,and 61991441);Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.2021005);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB01000000);Jiangsu Science and Technology Plan(Grant No.BK20180255);supported by the Center for Clean Energy,Institute of Physics,Chinese Academy of Sciences。; The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device applications.We investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p...; 关键词：resistance ANNEALING RESISTIVITY

Gold-Nanoparticles/Boron-Doped-Diamond Composites as Surface-Enhanced Raman Scattering Substrates: 《Chinese Physics Letters》2020年第6期107-110,共4页Ai-Qi Zhang Qi-Liang Wang Ying Gao Shao-Heng Cheng Hong-Dong Li; Supported by the National Natural Science Foundation of China(Grant Nos.51672102 and 51972135)。; By vacuum sputtering and annealing processes of gold(Au)films on boron-doped diamond(BDD)surfaces,Aunanoparticles/BDD(AuNP/BDD)composite substrates were prepared as surface-enhanced Raman scattering(SERS)substrates.Th...; 关键词：BORON SYNERGISTIC ANNEALING

Dependence of Thermal Annealing on Transparent Conducting Properties of HoF_3-Doped ZnO Thin Films: 《Chinese Physics Letters》2019年第5期75-78,共4页Jin-Song Luo Jie Lin Li-Gong Zhang Xiao-Yang Guo Yong-Fu Zhu; Supported by the National Natural Science Foundation of China under Grant Nos 61774154 and 51503196; A kind of n-type HoF_3-doped zinc oxide-based transparent conductive film has been developed by electron beam evaporation and studied under thermal annealing in air and vacuum at temperatures 100–500℃.Effective subs...; 关键词：ZNO Ho DEPENDENCE of Thermal ANNEALING on TRANSPARENT CONDUCTING Properties of HoF3-Doped ZNO Thin Films

Microstructure of Hydrogen-Implanted Polycrystalline α-SiC after Annealing: 《Chinese Physics Letters》2018年第9期50-52,共3页Hui-Ping Liu Jin-Yu Li Bing-Sheng Li; Supported by the National Natural Science Foundation of China under Grant No 11475229; Microstructural evolution in H-implanted polycrystalline a-SiC upon thermal annealing at temperature 1100℃ is studied. After annealing, the samples are examined via cross-sectional transmission electron microscopy （...; 关键词：Microstructure of Hydrogen-Implanted Polycrystalline SiC after Annealing

X-Ray Radiation Sensing Properties of ZnS Thin Film:A Study on the Effect of Annealing: 《Chinese Physics Letters》2017年第7期262-265,共4页M.P.Sarma J.M.Kalita G.Wary; Chemically synthesized ZnS thin film is found to be a good x-ray radiation sensor. We report the effect of annealing on the x-ray radiation detection sensitivity of a ZnS thin film synthesized by a chemical bath depos...; 关键词：ZNS X-Ray Radiation Sensing Properties of ZnS Thin Film:A Study on the Effect of Annealing

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC被引量：1: 《Chinese Physics Letters》2017年第5期40-43,共4页刘玉柱李炳生张莉; Supported by the National Natural Science Foundation of China under Grant No 11475229; Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperat...; 关键词：High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC HRTEM

H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC被引量：1: 《Chinese Physics Letters》2017年第1期19-22,共4页韩驿李炳生王志光彭金鑫孙建荣魏孔芳姚存峰高宁高星庞立龙朱亚滨申铁龙常海龙崔明焕骆鹏盛彦斌张宏鹏方雪松赵四祥金锦黄玉璇刘超王栋何文豪邓天虞台鹏飞马志伟; Supported by the National Natural Science Foundation of China under Grant Nos 11005130,11475229 and 91026002;the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA03010301; Radiation-induced defect annealing in He⁺ ion-implanted 4H-SiC via H⁺ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He⁺ ions wi...; 关键词：H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC In

Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing被引量：1: 《Chinese Physics Letters》2016年第8期123-126,共4页申艳艳张一新祁婷乔瑜贾钰欣黑鸿君贺志勇于盛旺; Supported by the National Natural Science Foundation of China under Grant No 11405114;the Natural Science Foundation of Shanxi Province under Grant No 2015021065; Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field...; 关键词：CU of MCD Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing in by

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