Project supported by the National Natural Science Foundation of China(Grant No.51677149)
An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical f...
Project supported by the National Natural Science Foundation of China(No.51577054);the Science and Technology Major Project of Hunan Province(No.2017GK1020)
Silicon carbide(SiC) emitter turn-off thyristors(ETOs) are very promising high power capacity semiconductor devices for high voltage and high power density power systems and pulse power applications. However,reports o...
Project supported by the National Natural Science Foundation of China.
1 Effects of the Snubber Circuit Figure 1 shows the GTO chopper circuit with inductance load. In Fig. 1 the polarized snubber circuit consists of a resistor R_S, capacitor C_S, and diode V_S. The wiring inductance in ...
Project supported by the National Natural Science Foundation of China.
1 The Reverse Avalanche Breakdown of the Gate-Cathode Junction Figure 1 shows the waveforms of the gate circuit and parameters when the GTO is turned off. In the figure Eoff is the voltage of the negative e...