METAL-OXIDE-SEMICONDUCTOR

作品数：60被引量：53H指数：3
导出分析报告
相关领域：电子电信更多>>
相关作者：杨霏陶永洪汪玲刘奥陈弘达更多>>
相关机构：国网智能电网研究院南京电子器件研究所中国科学院全球能源互联网研究院更多>>
相关期刊：《Journal of Rare Earths》《系统仿真技术》《Chinese Physics B》《Chinese Physics Letters》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家电网公司科技项目中国博士后科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Journal of Materials Science & Technologyx
共 条 记 录，以下是1-2
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Large-area(64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor(NMOS) inverters被引量：1
《Journal of Materials Science & Technology》2021年第22期26-35,共10页Shuangshuang Shao Kun Liang Xinxing Li Jinfeng Zhang Chuan Liu Zheng Cui Jianwen Zhao 
This work was financially supported by the National Key R&D Program of“Strategic Advanced Electronic Materials”(No.2016YFB04011100);the Basic Research Program of Jiangsu Province(Nos.BK20161263,SBK2017041510);the Science and Technology Program of Guangdong Province(Nos.2016B090906002,2019B010924002);the Basic Research Program of Suzhou Institute of Nanotech and Nano-bionics(No.Y5AAY21001);the National Natural Science Foundation of China(Nos.61750110517,61805166);the Cooperation Project of Vacuum Interconnect Nano X Research Facility(NANO-X)of Suzhou Nanotechnology and Nano-Bionics Institute(H060)。
It is a big challenge to construct large-scale,high-resolution and high-performance inkjet-printed metal oxide thin film transistor(TFT)arrays with independent gates for the new printed displays.Here,a self-confined i...
关键词：Inkjet printing Heterojunction channel 64×64 arrays High mobility NMOS inverter 
Current Progress of Hf(Zr)-Based High-k Gate Dielectric Thin Films被引量：1
《Journal of Materials Science & Technology》2007年第4期433-448,共16页Gang HE Lide ZHANG 
the support from the National Major Project of Fundamental Research:Nanomaterials and Nanostructures(Grant No.2005CB623603);the National Natural Science Foundation of China(Grant No.10674138);the Special Fund for President Scholarship,Chinese Academy of Sciences.
With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investig...
关键词：Hf （Zr）-based high-k gate dielectric PVD Optical properties  metal-oxide-semiconductor 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部