supported by the Natural Science Foundation of Gansu Province,China(Grant No.20JR10RA611);the Fundamental Research Funds for Central Universities,China(Grant Nos.lzujbky-2017-178 and lzujbky-2017-181).
To address the discrepancy between carrier collection and light absorption of organic solar cells caused by the limited carrier mobility and optical absorption coefficient for the normally employed organic photoactive...
Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0401902 and 2016YFB0402001);Key-Area Research and Development Program of Guang Dong Province,China(Grant No.2019B010926001)。
Phase modulation is a crucial step when the frequency-based wavefront optimization technique is exploited to measure the optical transmission matrix(TM) of a scattering medium. We report a simple but powerful method, ...
Project supported by the National Natural Science Foundation of China(Grant Nos.61571222 and 11474160);the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20161009);the Six-Talent Peaks Project of Jiangsu Province,China
An underwater acoustic metasurface with sub-wavelength thickness is designed for acoustic wavefront manipulation.In this paper, a pentamode lattice and a frequency-independent generalized acoustic Snell's law are intr...
Project supported by the Chongqing Research Program of Basic Research and Frontier Technology(Grant No.cstc2015jcyj BX0098);the National Natural Science Foundation of China(Grant No.61575011);the Foundation for the Creative Research Groups of Higher Education of Chongqing(Grant No.CXTDX201601016)
High power optically pumped vertical-external-cavity surface-emitting lasers with front and end pump are re- ported. The gain chip consists of 15 repeats of In0.26GaAs/GaAsP0.02 multiple quantum wells and 30 pairs of ...
supported by the National High Technology Research and Development Program of China(Grant No.2012AA050301);Scientific Research of Hebei Education Department,China(Grant No.QN2017135)
P-type silicon heterojunction(SHJ) solar cells with a-SiC:H(n) emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on...
Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157);the Application Foundation of Suzhou,China(Grant No.SYG201437)
The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...
supported by the National Natural Science Foundation of China(Grants Nos.11547007 and 11304024);the Innovation Personnel Training Plan for Excellent Youth of Guangdong University Project(Grant No.2013LYM 0023);the Yangtze Fund for Youth Teams of Science and Technology Innovation(Grant No.2015cqt03)
The influence of phase-front curvature on the dynamical behavior of the fundamental mode soliton during its transmission in asymmetrical nonlocal media is studied in detail and the phase-front curvature can be imposed...
supported by the Research Program of the National University of Defense Technology(Grant No.JC 13-06-04)
In this paper, the three-dimensional (3D) coupling effect is discussed for nanowire junctionless silicon-on-insulator (SOI) FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the...
Project supported by the National Natural Science Foundation of China (Grant Nos. 10904132 and 11074225);the National Defense Science Technology Foundation of State Key Laboratory of High Temperature and Density Plasma Physics,China (Grant No. 9140C680604110C6805)
We present a new method that can be used to calculate pulse-front distortion by measuring the spectral interference of two point-diffraction fields in their overlapped district. We demonstrate, for the first time, the...
supported by the National High Technology Program of China (Grant No 2007AA03Z403);the National Natural Science Foundation of China (Grant Nos 60776042 and 60477011);National Basic Research Program of China (Grand No2006CB921607)
Ridge InGaN multi-quantum-well-structure (MQW) edge-emitting laser diodes (LDs) were grown on (0001) sapphire substrates by low-pressure metal-organic chemical vapour deposition (MOCVD). The dielectric TiO2/Si...