NON-POLAR

作品数：31被引量：11H指数：2
导出分析报告
相关领域：理学更多>>
相关机构：东南大学更多>>
相关期刊：《Chemical Research in Chinese Universities》《Chinese Physics B》《Green Energy & Environment》《Open Journal of Veterinary Medicine》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划福建省自然科学基金中国博士后科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 主题=A-PLANEx
共 条 记 录，以下是1-4
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer
《Chinese Physics Letters》2020年第3期69-72,共4页Shen Yan Xiao-Tao Hu Jun-Hui Die Cai-Wei Wang Wei Hu Wen-Liang Wang Zi-Guang Ma Zhen Deng Chun-Hua Du Lu Wang Hai-Qiang Jia Wen-Xin Wang Yang Jiang Guoqiang Li Hong Chen 
Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。
We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...
关键词：INSERTION POLAR ROUGHNESS 
Strain Distributions in Non-Polar a-Plane In_(x)Ga_(1−x)N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction
《Chinese Physics Letters》2013年第9期169-172,共4页ZHAO Gui-Juan YANG Shao-Yan LIU Gui-Peng LIU Chang-Bo SANG Ling GU Cheng-Yan LIU Xiang-Lin WEI Hong-Yuan ZHU Qin-Sheng WANG Zhan-Guo 
Supported by the National Natural Science Foundation of China under Grant Nos 91233111,61274041,11275228,61006004 and 61076001;the National Basic Research Program of China(No 2012CB619305);the National High-Technology R&D Program of China(No 2011AA03A101).
By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalor...
关键词：technique deposition. PLANE 
Effects of V/III ratio on the growth of a-plane GaN films
《Chinese Physics B》2011年第10期368-372,共5页谢自力 李弋 刘斌 张荣 修向前 陈鹏 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900);High Technology Research Program of China (Grant No. 2009AA03A198);the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003);the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...
关键词：V/III ratio a-plane GaN NON-POLAR metal-organic chemical vapour deposition 
Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films
《Chinese Physics B》2010年第1期520-523,共4页赵璐冰 于彤军 吴洁君 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018)
Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...
关键词：non-polar GaN V/III ratio ANISOTROPY migration length 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部