SUBMICRON

作品数：139被引量：261H指数：9
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相关作者：李青松王志强赵辉聂刚韩小彦更多>>
相关机构：清华大学东南大学中国石油大学（华东）中南民族大学更多>>
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相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>
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Numerical simulation of modulation to incident laser by submicron to micron surface contaminants on fused silica被引量：1
《Chinese Physics B》2016年第1期632-639,共8页杨亮 向霞 苗心向 李莉 袁晓东 晏中华 周国瑞 吕海兵 郑万国 祖小涛 
supported by the National Natural Science Foundation of China(Grant No.61178018);the Ph.D.Funding Support Program of Education Ministry of China(Grant No.20110185110007)
Modulation caused by surface/subsurface contaminants is one of the important factors for laser-induced damage of fused silica. In this work, a three-dimensional finite-difference time-domain （3D-FDTD） method is empl...
关键词：fused silica laser-induced damage particulate contaminants MODULATION 
Preparation and study on performance of submicron nickel powder for multilayer chip positive temperature coefficient resistance被引量：4
《Chinese Physics B》2010年第11期571-575,共5页陈勇 龚树萍 傅邱云 郑志平 黄日明 苏鹏 
Project supported by the "863" (Grant No. SQ2008AA03Z4471960);the National Natural Science Foundation of China(Grant No. 60676050)
Base metal nickel is often used as the inner electrode in multilayer chip positive temperature coefficient resistance （PTCR）. The fine grain of ceramic powders and base metal nickel are necessary. This paper uses re...
关键词：SUBMICRON nickel powder liquid-reduction process positive temperature coefficient （PTC） 
Fabrication of two- and three-dimensional periodic submicron structures by holographic lithography with a 635 nm laser and matched photopolymer
《Chinese Physics B》2010年第1期388-392,共5页朱腾飞 谭炳辉 潘雪丰 陶卫东 
Projiect supported by the National Key Basic Research Special Fund of China (Grant No. 2004CB719805);the Ningbo Natural Science Foundation, China (Grant No. 2009A610011)
2D and 3D submicron periodic structures are first fabricated by red-induced photopolymerization using a common 635 nm semiconductor laser and specially developed red-sensitive polymer material. The principle of this n...
关键词：submicron periodic-structures holographic fabrication red sensitive polymer redincuced polymerization 
Microstructural and electromagnetic properties of MnO_2 coated nickel particles with submicron size
《Chinese Physics B》2009年第6期2571-2575,共5页唐葆霖 何峻 嵇天浩 王新林 
Project supported by the National Natural Science Foundation of China (Grant No 50671026)
Nickel particles with submicron size are prepared by using the solvothermal method. These spheres are then coated with a layer of MnO2 using the soft chemical method. The microstructure is characterized by x-ray diffr...
关键词：core/shell microstructure SUBMICRON electromagnetic properties 
Fabrication of high-quality submicron Nb/Al-AlO_x/Nb tunnel junctions被引量：2
《Chinese Physics B》2008年第8期3083-3086,共4页于海峰 曹文会 朱晓波 杨海方 于洪伟 任育峰 顾长志 陈赓华 赵士平 
Project supported by the National Natural Science Foundation of China (Grant Nos 10474129 and 10534060);the Ministry of Science and Technology of China (Grant Nos 2006CB601007 and 2006CB921107)
Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable proces...
关键词：Nb junctions FABRICATION superconducting qubit macroscopic quantum phenomena 
Degradation characteristics and mechanism of PMOSFETs under NBT-PBT-NBT stress
《Chinese Physics B》2007年第5期1445-1449,共5页刘红侠 李忠贺 郝跃 
Project supported by the National Natural Science Foundation of China （Grant No 60206006）, the Program for New Century Excellent Talents of Ministry of Education of China （Grant No 681231366）, the National Defense Pre-Research Foundation of China （Grant No 51308040103） and the Key Project of Chinese Ministry of Education （Grant No 104172）.
Degradation characteristics of PMOSFETs under negative bias temperature-positive bias temperature-negative bias temperature （NBT-PBT-NBT） stress conditions are investigated in this paper. It is found that for all de...
关键词：ultra deep submicron PMOSFETs negative bias temperature instability （NBTI） positive bias temperature instability （PBTI） interface traps 
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