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MONOLAYER: 作品数：721被引量：916H指数：13; 导出分析报告; 相关领域：理学更多>>; 相关作者：张林傅玉灿丁文锋杨长勇陈珍珍更多>>; 相关机构：中国科学技术大学北京大学陕西师范大学中国科学院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金北京市自然科学基金更多>>

Layer-dependent optical and dielectric properties of CdSe semiconductor colloidal quantum wells characterized by spectroscopic ellipsometry: 《Journal of Semiconductors》2025年第4期46-53,共8页Chenlin Wang Haixiao Zhao Xian Zhao Baoqing Sun Jie Lian Yuan Gao; supported by the National Natural Science Foundation of China(62205180);the Natural Science Foundation of Shandong Province(ZR2022QF029);the Taishan Scholar Program of Shandong Province(Young Scientist).; Semiconductor colloidal quantum wells(CQWs)with atomic-precision layer thickness are rapidly gaining attention for next-generation optoelectronic applications due to their tunable optical and electronic properties.In ...; 关键词：CdSe CQWs bandgap spectroscopic ellipsometry monolayer number exciton binding energy

Pressure manipulation of ultrafast carrier dynamics in monolayer WS_(2): 《Journal of Semiconductors》2023年第8期35-40,共6页Yao Li Haiou Zhu Zongpeng Song; This work was supported by Shenzhen Science and Technology Innovation Commission(JCYJ20220530153004010).; Two-dimensional transition metal dichalcogenides(TMDs)have intriguing physic properties and offer an exciting platform to explore many features that are important for future devices.In this work,we synthesized monolay...; 关键词：two-dimensional transition metal dichalcogenides hydrostatic pressure carrier dynamics band structure ultrafast spectroscopy

A family of flexible two-dimensional semiconductors:MgMX2Y6(M=Ti/Zr/Hf;X=Si/Ge;Y=S/Se/Te): 《Journal of Semiconductors》2023年第4期70-80,共11页Junhui Yuan Kanhao Xue Xiangshui Miao Lei Ye; supported by the National Natural Science Foundation of China (Grant No. 61974049, 62222404 61974050);National Key Research and Development Plan of China (Grant No. 2021YFB3601200); Inspired by the recently predicted 2D MX_(2)Y_(6)(M=metal element;X=Si/Ge/Sn;Y=S/Se/Te),we explore the possible applications of alkaline earth metal(using magnesium as example)in this family based on the idea of eleme...; 关键词：two-dimensional materials MgMX_(2)Y_(6)monolayer In2X2Y6 monolayer SEMICONDUCTOR first-principles calculations

Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer被引量：1: 《Journal of Semiconductors》2023年第1期85-93,共9页Li Zhong Xiaobao Li Wei Wang Xinle Xiao; supported by the Fundamental Research Funds for the Central Universities of China(Nos.PA2021KCPY0029 and LEM21A01)。; In recent years,Janus two-dimensional(2D)materials have received extensive research interests because of their outstanding electronic,mechanical,electromechanical,and optoelectronic properties.In this work,we explore ...; 关键词：Janus InGaSSe monolayer SEMICONDUCTING photocatalyst PIEZOELECTRICITY

Valley dynamics of different excitonic states in monolayer WSe_(2)grown by molecular beam epitaxy: 《Journal of Semiconductors》2022年第8期33-40,共8页Shengmin Hu Jialiang Ye Ruiqi Liu Xinhui Zhang; supported by the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB43000000).; Monolayer transition-metal dichalcogenides possess rich excitonic physics and unique valley-contrasting optical selection rule,and offer a great platform for long spin/valley lifetime engineering and the associated sp...; 关键词：TMDCs EXCITONS valley polarization lifetime two-color time-resolved Kerr rotation spectroscopy

Magnetic tuning in a novel half-metallic Ir_(2)TeI_(2) monolayer: 《Journal of Semiconductors》2022年第5期70-78,共9页Didi Zhao Chenggong Zhang Changwen Zhang Weixiao Ji Shengshi Li Peiji Wang; supported by the Taishan Scholar Program of Shandong Province(No.ts20190939);National Natural Science Foundation of China(Grant No.62071200,12004137,11804116,52173283);the Natural Science Foundation of Shandong Province(Grant No.ZR2018MA035,ZR2020QA052,ZR2019MA041);Independent Cultivation Program of Innovat ion Team of Jinan City(Grant No.2021GXRC043)。; A two-dimensional(2D) high-temperature ferromagnetic half-metal whose magnetic and electronic properties can be flexibly tuned is required for the application of new spintronics devices. In this paper, we predict a st...; 关键词：two-dimensional materials SPINTRONICS HALF-METAL magnetic anisotropy energy

Double-balanced mixer based on monolayer graphene fieldeffect transistors: 《Journal of Semiconductors》2022年第5期79-83,共5页Min Wu Weida Hong Guanyu Liu Jiejun Zhang Ziao Tian Miao Zhang; National Natural Science Foundation of China(Grant Nos.51925208,61974157,61851401,62122082);Key Research Project of Frontier Science,Chinese Academy of Sciences(QYZDB-SSW-JSC021);Strategic Priority Research Program(B)of the Chinese Academy of Sciences(XDB30030000);National Science and Technology Major Project(2016ZX02301003);Science and Technology Innovation Action Plan of Shanghai Science and Technology Committee(20501130700);Science and Technology Commission of Shanghai Municipality(19JC1415500)。; Graphene field-effect transistors(GFET) have attracted much attention in the radio frequency(RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm i...; 关键词：GFET MIXER RF SIMULATION IIP3

Berezinskii-Kosterlitz-Thouless phase transition in a 2D-XY ferromagnetic monolayer: 《Journal of Semiconductors》2021年第12期12-14,共3页Jiesu Wang; It has been widely discussed whether long-range magnet-ic order could exist in low-dimensional(d<3)systems.Early studies,like Hohenberg-Mermin-Wagner theorem based on the Heisenberg model of magnetism,incline to a neg...; 关键词：FERROMAGNETIC MONOLAYER HEISENBERG

Magnetic quantum oscillation in a monolayer insulator: 《Journal of Semiconductors》2021年第6期8-10,共3页Xin Lu; The Shubnikov-de Haas(Sd H)oscillation,as evidenced by the oscillating resistivity as a function of magnetic field at sufficiently low temperature,is not uncommon in metals,semimetals and narrow gap semiconductors at ...; 关键词：OSCILLATION QUANTUM OCCUPY

An antiferromagnetic two-dimensional material: Chromium diiodides monolayer: 《Journal of Semiconductors》2020年第12期79-83,共5页Jingjing Zhang Jin Yang Liangzhong Lin JiaJi Zhu; This work was supported by the National Natural Science Foundation of China(No.11404043);Graduate Research Innovation Project of Chongqing(No.CYS18253).; The two-dimensional(2D)ferromagnetic materials and the related van der Waals homostructures have attracted considerable interest,while the 2D antiferromagnetic material has not yet been reported.Based on first-princip...; 关键词：first-principles calculation chromium diiodide two-dimensional materials two-dimensional antiferromagnet

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