SEMIPOLAR

作品数:11被引量:28H指数:2
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相关领域:电子电信理学更多>>
相关作者:孙钱更多>>
相关机构:中国科学院更多>>
相关期刊:《Chinese Physics Letters》《Chinese Physics B》《Opto-Electronic Advances》《Photonics Research》更多>>
相关基金:国家自然科学基金中国博士后科学基金国家高技术研究发展计划更多>>
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Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer
《Chinese Physics Letters》2016年第6期150-152,共3页许晟瑞 赵颖 姜腾 张进成 李培咸 郝跃 
Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108;the Fundamental Research Funds for the Central Universities under Grant No JB141101;the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01
The effect of a self-organized SiNs interlayer on the defect density of (1122) semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r...
关键词:GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlaye in of is by Improved Semipolar on 
Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (1122) GaN
《Chinese Physics Letters》2012年第1期254-256,共3页XU Sheng-Rui LIN Zhi-Yu XUE Xiao-Yong LIU Zi-Yang MA Jun-Cai JIANG Teng MAO Wei WANG Dang-Hui ZHANG Jin-Cheng HAO Yue 
Supported by the Fundamental Research Funds for the Central Universities under Grant No K50511250002;the National Key Science&Technology Special Project under Grant No 2008ZX01002-002;the Major Program and State Key Program of the National Natural Science Foundation of China under Grant Nos 60890191 and 60736033.
Nonpolar (1120) and semipolar (1122) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs).Transmission electron microscopy reveals that the de...
关键词:GAN SAPPHIRE MOCVD 
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