Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108;the Fundamental Research Funds for the Central Universities under Grant No JB141101;the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01
The effect of a self-organized SiNs interlayer on the defect density of (1122) semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r...
Supported by the Fundamental Research Funds for the Central Universities under Grant No K50511250002;the National Key Science&Technology Special Project under Grant No 2008ZX01002-002;the Major Program and State Key Program of the National Natural Science Foundation of China under Grant Nos 60890191 and 60736033.
Nonpolar (1120) and semipolar (1122) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs).Transmission electron microscopy reveals that the de...