DRIFT-DIFFUSION

作品数：21被引量：24H指数：3
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相关领域：电子电信理学更多>>
相关作者：翟剑仝佩刘蕴贤更多>>
相关机构：山东大学复旦大学更多>>
相关期刊：《Journal of Partial Differential Equations》《Journal of Electromagnetic Analysis and Applications》《Science China(Physics,Mechanics & Astronomy)》《Science China Mathematics》更多>>
相关基金：国家自然科学基金河南省自然科学基金美国国家科学基金山东省自然科学基金更多>>
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A multi-module with a two-way feedback method for Ulva drift-diffusion
《Acta Oceanologica Sinica》2023年第12期118-134,共17页Hui Sheng Jianmeng Li Qimao Wang Bin Zou Lijian Shi Mingming Xu Shanwei Liu Jianhua Wan Zhe Zeng Yanlong Chen 
The Shandong Provincial Natural Science Foundation of China under contract No.ZR2019MD023;the National Natural Science Foundation of China under contract No.41776182.
The outbreak of Ulva in the Yellow Sea has seriously affected marine ecology and economic activities.Therefore,effective prediction of the distribution of Ulva is of great significance for disaster prevention and redu...
关键词：ULVA remote sensing DRIFT DIFFUSION FEEDBACK 
Nonlinear free vibration of piezoelectric semiconductor doubly-curved shells based on nonlinear drift-diffusion model被引量：1
《Applied Mathematics and Mechanics(English Edition)》2023年第10期1761-1776,共16页Changsong ZHU Xueqian FANG Jinxi LIU 
Project supported by the National Natural Science Foundation of China (Nos. 12172236, 12202289,and U21A20430);the Science and Technology Research Project of Hebei Education Department of China (No. QN2022083)。
In this paper, the nonlinear free vibration behaviors of the piezoelectric semiconductor(PS) doubly-curved shell resting on the Pasternak foundation are studied within the framework of the nonlinear drift-diffusion(NL...
关键词：nonlinear free vibration piezoelectric semiconductor(PS)doubly-curved shell nonlinear drift-diffusion(NLDD)model linearized drift-diffusion(LDD)model 
Random Walk Approximation for Irreversible Drift-Diffusion Process on Manifold:Ergodicity,Unconditional Stability and Convergence
《Communications in Computational Physics》2023年第6期132-172,共41页Yuan Gao Jian-Guo Liu 
Jian-Guo Liu was supported in part by NSF under awards DMS-2106988;by NSF RTG grant DMS-2038056;Yuan Gao was supported by NSF under awards DMS-2204288.
Irreversible drift-diffusion processes are very common in biochemical reactions.They have a non-equilibrium stationary state(invariant measure)which does not satisfy detailed balance.For the corresponding Fokker-Planc...
关键词：Symmetric decomposition non-equilibrium thermodynamics enhancement by mixture exponential ergodicity structure-preserving numerical scheme 
半导体drift-diffusion模型的局部间断Galerkin方法及数值模拟
《山东大学学报（理学版）》2023年第4期1-7,共7页肖红单 刘蕴贤 
国家自然科学基金资助项目(12071262);山东省自然科学基金资助项目(ZR2020MA048)。
考虑半导体drift-diffusion(DD)模型一维和二维问题的局部间断Galerkin(LDG)方法,并进行数值模拟。模拟一维问题时,在浓度变化剧烈的部分采用细网格,在浓度变化平缓的地方采用粗网格,并与均匀网格的数值模拟进行比较,实现了在非均匀剖...
关键词：半导体 drift-diffusion模型 局部间断Galerkin方法 
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
《Journal of Microelectronic Manufacturing》2020年第4期21-31,共11页Cristina Medina-Bailon Tapas Dutta Fikru Adamu-Lema Ali Rezaei Daniel Nagy Vihar P.Georgiev Asen Asenov 
the European Union Horizon 2020 research and innovation programme under grant agreement No.688101 SUPERAID7 and has received further funding from EPSRC UKRI Innovation Fellowship scheme under grant agreement No.EP/S001131/1(QSEE),No.EP/P009972/1(QUANTDEVMOD)and No.EP/S000259/1(Variability PDK for design based research on FPGA/neuro computing);and from H2020-FETOPEN-2019 scheme under grant agreement No.862539-Electromed-FET OPEN.
This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software(NESS)which is currently under development at the Device Modeling Group of the University of G...
关键词：Integrated Simulation Environment VARIABILITY DRIFT-DIFFUSION Quantum Correction Kubo-Greenwood Non-Equilibrium Green’s Function 
Impact of carrier transport on the performance of QD lasers on silicon:a drift-diffusion approach被引量：1
《Photonics Research》2020年第8期1388-1397,共10页MARCO SALDUTTI ALBERTO TIBALDI FEDERICA CAPPELLUTI MARIANGELA GIOANNINI 
The operation of quantum dot lasers epitaxially grown on silicon is investigated through a quantum-corrected Poisson-drift-diffusion model.This in-house developed simulation framework completes the traditional rate eq...
关键词：LASING TRANSPORT DIFFUSION 
Asymptotic Behavior of Solutions of the Bipolar Quantum Drift-Diffusion Model in the Quarter Plane
《Wuhan University Journal of Natural Sciences》2019年第6期467-473,共7页LIU fang LI Yeping 
Supported by the National Natural Science Foundation of China(11671134)
In this study, we consider the one-dimensional bipolar quantum drift-diffusion model, which consists of the coupled nonlinear fourth-order parabolic equation and the electric field equation. We first show the global e...
关键词：ASYMPTOTIC behavior quantum DRIFT-DIFFUSION model SELF-SIMILAR wave energy ESTIMATE 
Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime
《Science China(Information Sciences)》2019年第6期122-129,共8页Shaoyan DI Lei SHEN Pengying CHANG Kai ZHAO Tiao LU Gang DU Xiaoyan LIU 
supported by National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, 61404005)
This paper proposes a systematic procedure to calibrate the parameters of the drift-diffusion(DD) model for a performance evaluation of InG aA s MOSFETs in the quasi-ballistic regime. The simulation results of a deter...
关键词：DRIFT-DIFFUSION model calibration BOLTZMANN TRANSPORT equation BTE BALLISTIC TRANSPORT high field In GaAs MOSFET 
Calibration of drift-diffusion model in quasi-ballistic transport region for Fin FETs被引量：1
《Science China(Information Sciences)》2018年第6期215-222,共8页Lei SHEN Shaoyan DI Longxiang YIN Xiaoyan LIU Gang DU 
supported in part by National Key Research and Development Plan(Grant No.2016YFA0202101);National Natural Science Fund of China(Grant No.61421005);National High Technology Research and Development Program of China(863)(Grant No.2015AA016501)
In the past few years, conventional digital IC technologies have developed rapidly and the device structures have shrunk down to the quasi-ballistic region which strongly affects the device characteristics.The usage o...
关键词：Fin FET technology computer aided design(TCAD) DRIFT-DIFFUSION full-band Monte Carlo simulator quasi-ballistic transport 
A threshold voltage and drain current model for symmetric dual-gate amorphous In GaZnO thin film transistors被引量：1
《Science China(Information Sciences)》2018年第2期190-199,共10页Minxi CAI Ruohe YAO 
supported by National Natural Science Foundation of China(Grant No.61274085);Science and Technology Research Projects of Guangdong Province(Grant No.2015B090909001)
Based on the drift-diffusion theory, a simple threshold voltage and drain current model for symmetric dual-gate（DG） amorphous In Ga Zn O（a-IGZO） thin film transistors（TFTs） is developed. In the subthreshold regi...
关键词：amorphous In Ga Zn O drift-diffusion current dual-gate thin film transistors threshold voltage 
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