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High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K被引量：4
《Journal of Semiconductors》2022年第10期56-63,共8页Tingting He Xiaohong Yang Yongsheng Tang Rui Wang Yijun Liu 
jointly supported by the National Key Research and Development Program of China (2019YFB22-05202);National Natural Science Foundation of China(61774152)
Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed struct...
关键词：single period sinusoidal pulse InGaAs/InP single photon avalanche diode parallel balanced photon detection effi-ciency dark count rate noise-equivalent power 
A monolithic 60GHz balanced low noise amplifier
《Journal of Semiconductors》2015年第4期110-114,共5页杨雪 杨浩 张海英 郑新年 戴志伟 李志强 杜泽保 
supported by the External Cooperation Program of BIC,Chinese Academy of Sciences(No.172511KYSB20130108)
This paper presents a 60 GHz balanced low noise amplifier. Compared with single-ended structures, the balanced structure can obtain a better input/output return loss, a lower noise figure （NF）, a 3 dB improvement of...
关键词：balanced amplifier 60 GHz low noise 
A millimeter-wave monolithic doubly balanced diode mixer
《Journal of Semiconductors》2010年第3期90-94,共5页李芹 王志功 徐雷钧 
A broadband miniature doubly balanced diode mixer chip fabricated by Win＇s 0.15/zm pHEMT technology is presented. In order to save chip area, a four-fold modified Marchand balun is used. A coupled line U section impr...
关键词：doubly balanced Marchand balun conversion loss 
Design of a 24–40 GHz balanced low noise amplifier using Lange couplers被引量：1
《Journal of Semiconductors》2009年第4期71-74,共4页张宗楠 黄清华 郝明丽 杨浩 张海英 
A wide band （24–40 GHz） fully integrated balanced low noise amplifier （LNA） using Lange couplers was designed and fabricated with a 0.15 μm pseudomorphic HEMT （pHEMT） technology. A new method to design a low-l...
关键词：Lange coupler BALANCED LNA low loss PHEMT 
Design and measurement of a 53 GHz balanced Colpitts oscillator被引量：1
《Journal of Semiconductors》2009年第1期50-53,共4页赵衍 王志功 李伟 章丽 
A 53 GHz Colpitts oscillator implemented in a SiGe：C BiCMOS technology is presented. Limited by a 26.5 GHz frequency analyzer, the oscillator was measured indirectly through an on-chip mixer. The mixer downconverted ...
关键词：COLPITTS negative resistance OSCILLATOR phase noise 
A4~12GHz Wideband Balanced MIC Power Amplifier被引量：1
《Journal of Semiconductors》2007年第12期1868-1871,共4页姚小江 李滨 刘新宇 陈中子 陈晓娟 
A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz cente...
关键词：WIDEBAND Lange coupler microwave integrated circuit balanced power amplifiers 
A 4.8GHz CMOS Fully Integrated LC Balanced Oscillator with Symmetrical Noise Filter Technique and Large Tuning Range
《Journal of Semiconductors》2005年第3期448-454,共7页杨丰林 张钊锋 李宝骐 闵昊 
This paper presents a fully integrated 4 8GHz VCO with an invention——symmetrical noise filter technique.This VCO,with relatively low phase noise and large tuning range of 716MHz,is fabricated with the 0 25μm SMIC...
关键词：VCO symmetrical noise filter radio frequency INDUCTOR switch capacitor 
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