NANOLAMINATES

作品数:13被引量:21H指数:3
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相关领域:一般工业技术更多>>
相关期刊:《Science China Materials》《Journal of Materials Science & Technology》《Chinese Physics B》《Nano Research》更多>>
相关基金:国家自然科学基金高等学校学科创新引智计划中国博士后科学基金霍英东教育基金更多>>
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Surface termination effects on the electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition
《Chinese Physics B》2020年第11期503-507,共5页Ji-Bin Fan Shan-Ya Ling Hong-Xia Liu Li Duan Yan Zhang Ting-Ting Guo Xing Wei Qing He 
Project supported by the National Natural Science Foundation of China(Grant Nos.61604016 and 51802025);China Postdoctoral Science Foundation(Grant No.2017M613028);the Fundamental Research Funds for the Central Universities,China(Grant Nos.300102319209 and 300102310501);the Innovation,and Entrepreneurship Training Program for Undergraduates(Grant Nos.202010710231 and 201910710564).
Effects of initial surface termination on electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition are studied by conductive atomic force microscopy working in contact mode and stan...
关键词:La2O3/Al2O3 atomic layer deposition TERMINATION ANNEALING 
Influences of different oxidants on characteristics of La_2O_3/Al_2O_3 nanolaminates deposited by atomic layer deposition被引量:1
《Chinese Physics B》2017年第6期395-400,共6页樊继斌 刘红侠 段理 张研 于晓晨 
supported by the National Natural Science Foundation of China(Grant Nos.61604016 and 51501017);the Fundamental Research Funds for the Central Universities,China(Grant No.310831161003)
A comparative study of two kinds of oxidants(H2O and O3) with the combination of two metal precursors(TMA and La(~iPrCp)3) for atomic layer deposition(ALD) La2O3/Al2O3 nanolaminates is carried out. The effect...
关键词:La2O3/Al2O3 nanolaminates atomic layer deposition OXIDANTS ANNEALING 
Performance and reliability improvement of La_2O_3/Al_2O_3 nanolaminates using ultraviolet ozone post treatment
《Chinese Physics B》2017年第5期376-381,共6页樊继斌 刘红侠 孙斌 段理 于晓晨 
Project supported by the National Natural Science Foundation of China(Grant Nos.61604016 and 51501017);the Fundamental Research Funds for the Central Universities,China(Grant No.310831161003)
La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 ...
关键词:ultraviolet annealing ozone photoelectron moisture conductive suppressed replace dielectric annealed 
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