SUPERLATTICES

作品数：221被引量：120H指数：5
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相关领域：电子电信理学更多>>
相关作者：金英进姜恩永任世伟金光日孙聆东更多>>
相关机构：天津大学金日成综合大学北京大学中国科学院数学与系统科学研究院更多>>
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Long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber
《Journal of Semiconductors》2023年第4期81-85,共5页Shaolong Yan Jianliang Huang Ting Xue Yanhua Zhang Wenquan Ma 
supported in part by China’s NSF Program 61874103
We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8...
关键词：interband cascade infrared photodetector type II superlattices long wavelength 
Interface effect on superlattice quality and optical properties of InAs/GaSb type-Ⅱ superlattices grown by molecular beam epitaxy被引量：2
《Chinese Physics B》2022年第12期671-676,共6页Zhaojun Liu Lian-Qing Zhu Xian-Tong Zheng Yuan Liu Li-Dan Lu Dong-Liang Zhang 
Project supported by the Beijing Scholars Program(Grant No.74A2111113);the Research Project of Beijing Education Committee(Grant No.KM202111232019);the National Natural Science Foundation of China(Grant No.62105039);the Research Project of Beijing Information Science&Technology University(Grant No.2022XJJ07)
We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is ...
关键词：InAs/GaSb type-Ⅱsuperlattice molecular beam epitaxy interface mid-wave infrared 
Long-Period InAs/GaSb Type-II Superlattices for Terahertz Application
《Journal of Modern Physics》2014年第17期1880-1888,共9页Longlong Li Jun Ni Wen Xu 
We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of such S...
关键词：Long-Period INAS/GASB TYPE-II SLS THZ OPTOELECTRONIC Properties THZ Band-Gap and Absorption 
Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging被引量：1
《Crystal Structure Theory and Applications》2013年第2期46-56,共11页Yuxin Song Shumin Wang Carl Asplund Rickard Marcks von Würtemberg Hedda Malm Amir Karim Xiang Lu Jun Shao 
InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and tran...
关键词：INAS/GASB TYPE-II Superlattce Molecular Beam EPITAXY Strain COMPENSATION 
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