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作品数:80被引量:80H指数:5
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相关领域:理学更多>>
相关作者:刘韵丹祁祥李俊钟建新杨利文更多>>
相关机构:湘潭大学上海交通大学更多>>
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相关基金:国家自然科学基金中国博士后科学基金国家重点基础研究发展计划安徽省自然科学基金更多>>
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A two-dimensional tetragonal structure of vanadium telluride
《Nano Research》2023年第5期7749-7755,共7页Zizhao Liu Ye Tao Zhiqiang Cui Yi Ji Xuhan Zhou Peigen Li Yunwei Zhang Dingyong Zhong 
the National Natural Science Foundation of China(Nos.11974431,92165204,and 11832019);Guangdong Major Project of Basic and Applied Basic Research(No.2021B0301030002).
The family of vanadium chalcogenides with variable stoichiometry and abundant crystallographic structures are promising platforms for realizing exotic emergent phenomena.Here,we report on a novel two-dimensional(2D)te...
关键词:vanadium telluride molecular beam epitaxy scanning tunneling microscopy two-dimensional magnetism first-principles calculation 
Ultra-bright near-infrared-IIb emitting Zn-doped Ag_(2)Te quantum dots for noninvasive monitoring of traumatic brain injury被引量:2
《Nano Research》2023年第2期2719-2727,共9页Yifei Zhou Biao Huang Shi-Hui Chen Shu-Lin Liu Mingxi Zhang Ran Cui 
supported by the National Natural Science Foundation of China(Nos.22174105 and 21974104);the National Key Research and Development(R&D)Program of China(No.2020YFA0908800);Large-scale Instrument and Equipment Sharing Foundation of Wuhan University.
The long-wavelength region of the near-infrared-IIb(NIR-IIb,1,500–1,700 nm)imaging window has become an ideal window for in vivo imaging due to the suppressed photon scattering and near-zero autofluorescence of biolo...
关键词:near-infrared-IIb(NIR-IIb)window silver telluride quantum dots fluorescence in vivo imaging 
Phase-pure two-dimensional Fe_(X)GeTe_(2) magnets with near-room-temperature Tc
《Nano Research》2022年第1期457-464,共8页Govindan Kutty Rajendran Nair Zhaowei Zhang Fuchen Hou§ Ali Abdelaziem Xiaodong Xu Steve Wu Qing Yang Nan Zhang Weiqi Li Chao Zhu Yao Wu Heng Weiling Lixing Kang Teddy Salim Jiadong Zhou Lin Ke Junhao Lin Xingji Li Weibo Gao Zheng Liu 
supported from National Research Foundation Singapore programme NRF-CRP22-2019-0007,NRF-CRP22-2019-0004 and NRF-CRP21-2018-0007;supported by the Ministry of Education,Singapore,under its AcRF Tier 3 Programme‘Geometrical Quantum Materials’(MOE2018-T3-1-002),AcRF Tier 2(MOE2019-T2-2-105)and AcRF Tier 1 RG4/17 and RG7/18;We also thank the funding support from National Research foundation(NRF-CRP22-2019-0004).
Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density.However,a s...
关键词:cascaded space confined chemical vapor deposition(CVD) van der Waals(vdW) FERROMAGNETISM out of plane anisotropy iron germanium telluride terahertz 
Origin of inhomogeneity in spark plasma sintered bismuth antimony telluride thermoelectric nanocomposites被引量:2
《Nano Research》2020年第5期1339-1346,共8页Enzheng Shi Shuang Cui Nicholas Kempf Qingfeng Xing Thomas Chasapis Huazhang Zhu Zhe Li Je-Hyeong Bahk G.Jeffrey Snyder Yanliang Zhang Renkun Chen Yue Wu 
R.K.C.acknowledges grant#NSF(DMR-1508420).Y.W.thanks the support from the Herbert L.Stiles Professorship and ACRI Center IrHtiative from Iowa State University.
Anisotropy and inhomogeneity are ubiquitous in spark plasma sintered thermoelectric devices.However,the origin of inhomogeneity in thermoelectric nanocomposites has rarely been investigated so far.Herein,we systematic...
关键词:bismuth antimony telluride solution synthesis THERMOELECTRICS INHOMOGENEITY 
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3被引量:2
《Nano Research》2020年第2期570-575,共6页Emanuele Longo Roberto Mantovan Raimondo Cecchini Michael D.Overbeek Massimo Longo Giovanna Trevisi Laura Lazzarini Graziella Tallarida Marco Fanciulli Charles H.Winter Claudia Wiemer 
We acknowledge the MP1402-Hooking together the European research in atomic layer deposition(HERALD)COST action and the Horizon 2020 project SKYTOP"Skyrmion-Topological Insulator and Weyl Semimetal Technology"(FETPROACT-2018-01,n.824123);Efforts at Wayne State University were supported by the U.S.National Science Foundation(Grant No.CHE-1607973)and EMD Performance Materials.
Taking the full advantage of the conformal growth characterizing atomic layer deposition(ALD),the possibility to grow Co thin films,with thickness from several tens down to few nanometers on top of a granular topologi...
关键词:atomic layer deposition X-ray diffraction Co-fcc Co-hep antimony telluride metal organic chemical vapor deposition SPINTRONICS 
Pressure-dependent phase transition of 2D layered silicon telluride(Si2le3)and manganese intercalated silicon telluride被引量:1
《Nano Research》2019年第9期2373-2377,共5页Virginia L. Johnson Auddy Anilao Kristie J. Koski 
Two-dimensional(2D)layered silicon telluride(SizTes)nanocrystals were compressed to 12 GPa using diamond anvil cell techniques.Optical measurements show a color change from transparent red to opaque black indicating a...
关键词:SILICON TELLURIDE Si2Te3 high PRESSURE diamond ANVIL cell two-dimensional(2D)layered material 
Morphological control of SnTe nanostructures by tuning catalyst composition被引量:4
《Nano Research》2015年第9期3011-3019,共9页Yichao Zou Zhigang Chen Jing Lin Xiaohao Zhou Wei Lu John Drennan Jin Zou 
A method of controlling the morphology of SnTe nanostructures produced by a simple chemical vapor deposition is presented, in which Au-containing catalysts with different Au concentrations are used to induce specific ...
关键词:tin telluride chemical vapor deposition morpholog'ficatalyst composition topological insulator thermoelectrics 
Highly sensitive phototransistors based on twodimensional GaTe nanosheets with direct bandgap被引量:4
《Nano Research》2014年第5期694-703,共10页Pingan Hu Jia Zhang Mina Yoon Xiao-Fen Qiao Xin Zhang Wei Feng Pingheng Tan Wei Zheng Jingjing Liu Xiaona Wang Juan C. Idrobo David B. Geohegan Kai Xiao 
Highly sensitive phototransistors based on two-dimensional (2D) GaTe nanosheet have been demonstrated. The performance (photoresponsivity, detectivity) of the GaTe nanosheet phototransistor can be efficiently adju...
关键词:PHOTODETECTOR gallium telluride two-dimensional semiconductor NANOSHEET 
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