SUPERJUNCTION

作品数：18被引量：21H指数：3
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相关领域：电子电信更多>>
相关作者：李肇基方健乔明黄淮吴郁更多>>
相关机构：电子科技大学北京工业大学更多>>
相关期刊：《物理学报》《Journal of Semiconductors》《The Journal of China Universities of Posts and Telecommunications》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家教育部博士点基金更多>>
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Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate
《Science China(Information Sciences)》2022年第6期277-278,共2页Xiaorong LUO Junyue HUANG Xu SONG Qinfeng JIANG Jie WEI Jian FANG Fei YANG 
supported by National Key Research and Development Program of China(Grant No.2016YFB0400502);Postdoctoral Innovative Talent Support Program(Grant No.BX20190059)。
Dear editor,SiC MOSFET has the advantages of low specific onresistance(Ron,sp),high breakdown voltage(BV),high operating temperature,and low thermal resistance.As a switching device,SiC MOSFET needs an anti-paralleled...
关键词：TRENCH DIODE BREAKDOWN 
A novel high performance TFS SJ IGBT with a buried oxide layer被引量：2
《Chinese Physics B》2014年第8期625-630,共6页张金平 李泽宏 张波 李肇基 
Project supported by the National Science and Technology Major Project,China(Grant No.2011ZX02504-003);the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2011J024);the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201301)
A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base ...
关键词：insulated gate bipolar transistor trench field stop SUPERJUNCTION buried oxide layer 
A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure
《Journal of Semiconductors》2013年第12期30-33,共4页李冰华 江兴川 李志贵 林信南 
Project supported by the Guangdong Science&Technology Project(No.2010B090400443);the Shenzhen Science&Technology Foundation(Nos.JC201005270276A,ZD201006110039A);the Longgang Science&Technology Developing Foundation
A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the n...
关键词：accumulation channel semi-superjunction structure BV SCSOA 
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