云南高校图书馆联盟文献共享服务平台- PHOTODIODE

PHOTODIODE: 作品数：104被引量：102H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：陈杰金湘亮仇玉林张欣张帅更多>>; 相关机构：中国科学院北京邮电大学中国科学院微电子研究所天津大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

-

在结果中检索

检索结果分析

结果分析中...

选择条件：

期刊=Semiconductor Photonics and Technology

共条记录，以下是1-4

全选清除导出

参考文献引证文献引用追踪

视图：

排序：

Photodiode Circuit Macro-model for SPICE Si mulation: 《Semiconductor Photonics and Technology》2006年第1期25-29,共5页RAO Cheng YUAN Xiang-hui ZHANG Si-jie Meng Li-ya Pan yin-song HUANG You-shu; National Natural Science Foundation of China(30470469); An accurate photodiode circuit macro-model is proposed for SPICE simulation. The definition and implementation of the macro-model is based on carrier stationary continuity equation. In this macro-model, the photodiode...; 关键词：Photodiode model SPICE macro-model NP junction Stationary continuity equation CMOS PHOTOCURRENT Carrier concentration

320×240 Pixels CMOS Digital Image Sensor with Wide Dynamic Range: 《Semiconductor Photonics and Technology》2004年第2期133-137,140,共6页FANGJie WANGJing-guang HONGZhi-liang; A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1...; 关键词：CMOS image sensor Digital image sensor PHOTODIODE Analog-to-digital converter Correlated double sampling Fixed pattern noise

Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array: 《Semiconductor Photonics and Technology》2000年第1期29-33,共5页CAO Jun-kai (Chongqing Optoelectronics Research Institute, Chongqing 400060,CHN); The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the...; 关键词：Si-photodiode Detector arrays CROSSTALK

Silicon　Photodiode　with　Very　Small　Sensitive　Area: 《Semiconductor Photonics and Technology》1996年第4期289-292,共4页① YIN Changsong,LI Xiaojun (Wuhan University,Wuhan 430072,CHN); The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density J LS counted by the sensitive area in the planar PN junction.The superhi...; 关键词：PHOTODIODE Photoelectric Conversion PN Junction

全选清除导出

共1页<1>

检索报告对象比较聚类工具使用帮助返回顶部