BURIED

作品数：330被引量：514H指数：10
导出分析报告
相关作者：李思渊王永顺林青刘卫丽封松林更多>>
相关机构：兰州大学中国科学院惠州中京电子科技有限公司汉城大学更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金重庆市自然科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Chinese Physics Lettersx
共 条 记 录，以下是1-8
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Buried Interface Molecular Hybrid Enables Efficient Perovskite Solar Cells
《Chinese Physics Letters》2024年第9期151-152,共2页Tianyu Huang Rui Zhu Deying Luo 
Perovskite solar cells(PSCs)with a positive-intrinsicnegative(p–i–n,commonly referred to as“inverted”)structure are becoming commercially attractive due to their superior power conversion efficiency(PCE)and better...
关键词：ATTRACTIVE PEROVSKITE CRYSTALLIZATION 
Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel
《Chinese Physics Letters》2018年第5期110-114,共5页Zhao-Zhao Hou Gui-Lei Wang Jia-Xin Yao Qing-Zhu Zhang Hua-Xiang Yin 
Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007;the National Key Research and Development Program of China under Grant No 2016YFA0301701;the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent pr...
关键词：FB Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel 
Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric
《Chinese Physics Letters》2017年第5期101-105,共5页王盛凯 马磊 常虎东 孙兵 苏玉玉 钟乐 李海鸥 金智 刘新宇 刘洪刚 
Supported by the National Science and Technology Major Project of China under Grant No 2011ZX02708-003;the National Natural Science Foundation of China under Grant No 61504165;the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences
Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. ...
关键词：INGAAS Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric MOSFET Al 
Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers被引量：1
《Chinese Physics Letters》2016年第6期121-124,共4页罗俊 赵胜雷 林志宇 张进成 马晓华 郝跃 
Supported by the National Natural Science Foundation of China under Grant Nos 61334002,61106106,and 61204085;the China Postdoctoral Science Foundation Funded Project under Grant No 2015M582610
A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long ...
关键词：AlGaN on is Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers HEMT of in 
Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs
《Chinese Physics Letters》2008年第1期227-229,共3页陈超 刘卫丽 马小波 沈勤我 宋志棠 林成鲁 
Supported by the National Natural Science Foundation of China under Grant Nos 60476006 and 60576014, the Shanghai Major State Technology Programme under Grant No 055211001, the National High Technology Research and Development Programme of China under Grant No 2006AA03Z315, the Shanghai Rising Star Programme （07QH14017）, and the Special Funds for Major State Basic Research Programme of China under Grant No 2006CB302706.
Highly arsenic-doped Si-on-insulator （SOI） substrate incorporated with buried MoSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors （HBTs） on SO...
关键词：PULSARS x-ray spectra relativity and gravitation REDSHIFT 
Protruding Structure Buried in Radio Map by Wavelet
《Chinese Physics Letters》2000年第5期388-389,共2页CHEN Pu-Chun ZHANG Xi-Zhen XIANG Shou-Ping FENG Long-Long W.Reich 
Supported by the National Natural Science Foundation of China under Grant Nos.19873009 and 19773017.
An efficient method to identify supernova remnants is provided,in order to iron out the great gap between the predicted number and the observed.We make an attempt to apply D4 wavelet to detect the useful structures bu...
关键词：BURIED noise apply 
Buried CoSi_(2)Layers in Silicon on Insulator Formed by Wafer Bonding
《Chinese Physics Letters》1999年第4期282-284,共3页ZHU Shi-yang HUANG Yi-ping RU Guo-ping 
Supported by the Science and Technology Development Foundation of Shanghai under Grant No.98JC14004.
A novel single-crystalline Si/poly-CoSi_(2)/SiO_(2)/Sub-Si structure has been successfully formed by silicon wafer bonding technique.The surface energy of the as-bonded wafers at room temperature is about 70erg/cm^(2)...
关键词：technique. BONDING CRYSTALLINE 
Atomic Force Microscopy on the Ga_(0.16)In_(0.84)As_(0.80)Sb_(0.20)Epilayer Grown by Metalorganic Chemical Vapor Deposition
《Chinese Physics Letters》1998年第10期724-726,共3页GAO Chun-xiao LI Shu-wei YANG Jie LIU Bing-bing 
Supported by the National Natural Science Foundation of China under Grant Nos.59572036 and 69576012;in part by the National Advanced Material Committee of China under Grant No.863-2-7-3-11。
The atomic force microscopy study was made on the quaternary Ga_(0.16)In_(0.84)As_(0.80)Sb_(0.20) epilayer prepared on GaSb substrate by metalorganic chemical vapor deposition.The island-like defects were found on the...
关键词：ISLAND MODE BURIED 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部