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作品数：19被引量：7H指数：1
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相关期刊：《Chinese Physics Letters》《Chinese Optics Letters》《Science China(Technological Sciences)》《Chinese Physics B》更多>>
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Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films
《Chinese Physics B》2024年第1期631-636,共6页陈凯 赵见国 丁宇 胡文晓 刘斌 陶涛 庄喆 严羽 谢自力 常建华 张荣 郑有炓 
Project supported by the National Key Research and Development Program of China (Grant Nos.2021YFB3601000 and 2021YFB3601002);the National Natural Science Foundation of China (Grant Nos.62074077,61921005,61974062,62204121,and 61904082);Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No.BE2021008-2);the China Postdoctoral Science Foundation (Grant No.2020M671441)。
Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural a...
关键词：nonpolar a-plane GaN film Mg-doping temperature strains activation efficiency 
Effects of V/III ratio on the growth of a-plane GaN films
《Chinese Physics B》2011年第10期368-372,共5页谢自力 李弋 刘斌 张荣 修向前 陈鹏 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900);High Technology Research Program of China (Grant No. 2009AA03A198);the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003);the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...
关键词：V/III ratio a-plane GaN NON-POLAR metal-organic chemical vapour deposition 
Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization
《Chinese Physics B》2011年第5期409-412,共4页张金风 许晟瑞 张进成 郝跃 
Project supported by the National Key Science & Technology Major Project of the Ministry of Science and Technology of China(Grant No. 2008ZX01002-002);the Major Program and the Key Program of the National Natural Science Foundation of China(Grant Nos. 60890191 and 60736033)
Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers： （A） a CaN nucleation layer deposited at low temperature...
关键词：a-plane GaN metal organic chemical vapour deposition A1N/A1GaN superlattice PHOTOLUMINESCENCE 
Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
《Chinese Physics B》2011年第1期639-642,共4页方浩 龙浩 桑立雯 齐胜利 熊畅 于彤军 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001);the National Basic Research program of China(Grant No.2007CB307004)
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the c...
关键词：metal-organic chemical deposition III-NITRIDES NONPOLAR light emitting diodes 
Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films
《Chinese Physics B》2010年第1期520-523,共4页赵璐冰 于彤军 吴洁君 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018)
Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...
关键词：non-polar GaN V/III ratio ANISOTROPY migration length 
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