MODULATION-DOPING

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The effect of δ-doping and modulation-doping on Si-doped high Al content n-Al_xGa_(1-x)N grown by MOCVD
《Journal of Semiconductors》2013年第5期26-28,共3页朱邵歆 闫建昌 曾建平 张宁 司朝 董鹏 李晋闽 王军喜 
supported by the National High Technology Research and Development Program of China(No.2011AA03 A 111);the National Natural Science Foundation of China(No.61006038)
The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x = 0.55) epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect...
关键词:n-Alx Ga1-xN MOCVD Δ-DOPING MODULATION-DOPING dopants diffusion 
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