supported by the National High Technology Research and Development Program of China(No.2011AA03 A 111);the National Natural Science Foundation of China(No.61006038)
The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x = 0.55) epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect...