Δ-DOPING

作品数：3被引量：0H指数：0
导出分析报告
相关领域：电子电信更多>>
相关期刊：《Chinese Physics Letters》《National Science Review》《Journal of Semiconductors》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
共 条 记 录，以下是1-3
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Significantly enhanced superconductivity in monolayer FeSe films on SrTiO_(3)(001) via metallic δ-doping
《National Science Review》2024年第3期113-121,共9页Xiaotong Jiao Wenfeng Dong Mingxia Shi Heng Wang Cui Ding Zhongxu Wei Guanming Gong Yanan Li Yuanzhao Li Binjie Zuo Jian Wang Ding Zhang Minghu Pan Lili Wang Qi-Kun Xue 
supported by the National Key R&D Program of China(2022YFA1403100,2022YFA1403101 and 2022YFA1403102);the National Natural Science Foundation of China(12074210 and 51788104);the Basic and Applied Basic Research Major Programme of Guangdong Province,China(2021B0301030003);the jihua Laboratory(X210141TL210);the support from the National Natural Science Foundation of China(11888101);the Innovation Program for Quantum Science and Technology(2021ZD0302400).
Superconductivity transition temperature(T_(c))marks the inception of a macroscopic quantum phase-coherent paired state in fermionic systems.For 2D superconductivity,the paired electrons condense into a coherent super...
关键词：monolayer FeSe interface superconductivity Δ-DOPING zero-resistance temperature superconductivity transition temperature 
Effect of Si δ-Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells
《Chinese Physics Letters》2016年第2期102-105,共4页Shaffa Almansour Hassen Dakhlaoui Emane Algrafy 
Supported by the Deanship of Scientific Research of University of Dammam under Grant No 2015134
In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson...
关键词：of is In GAN in Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells on 
The effect of δ-doping and modulation-doping on Si-doped high Al content n-Al_xGa_(1-x)N grown by MOCVD
《Journal of Semiconductors》2013年第5期26-28,共3页朱邵歆 闫建昌 曾建平 张宁 司朝 董鹏 李晋闽 王军喜 
supported by the National High Technology Research and Development Program of China(No.2011AA03 A 111);the National Natural Science Foundation of China(No.61006038)
The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN （x = 0.55） epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect...
关键词：n-Alx Ga1-xN MOCVD Δ-DOPING MODULATION-DOPING dopants diffusion 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部