the NUPTSF(Grant Nos.NY220078,NY217116,and NY220112);the Science Foundation of Jiangsu Province,China(Grant Nos.BK20211273 and BZ2021031);the Dual Innovative Doctor of Jiangsu Province,China(Grant No.JSSCBS20210522);the Institution of Jiangsu Province,China(Grant No.20KJB510014);the National and Local Joint Engineering Laboratory of RF and Micro-assembly(Grant No.KFJJ20200203);the Industry Program of Huzhou City(Grant No.2020GG03);the Distinguished Professor Grant of Jiangsu Province,China(Grant No.RK106STP18003);the Jiangsu Province Research Foundation,China(Grant Nos.NLXZYZZ219001 and SZDG2020009);the National Natural Science Foundation of China(Grant No.61964012);the Foundation of Jiangxi Science and Technology Department,China(Grant No.20202ACBL212001).
Most amorphous carbon(a-C)applications require films with ultra-thin thicknesses;however,the electronic structure and opto-electronic characteristics of such films remain unclear so far.To address this issue,we develo...
Project supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the National Natural Science Foundation of China(Grant No.61904135);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Natural Science Foundation of Shaanxi Province,China(Grant No.2020JQ-316).
Ultra-thin barrier(UTB) 4-nm-Al Ga N/Ga N normally-off high electron mobility transistors(HEMTs) having a high current gain cut-off frequency( fT) are demonstrated by the stress-engineered compressive Si N trench tech...
the National Natural Science Foundation of China(Grant No.62071312);the Important R&D Projects of Shanxi Province,China(Grant No.201803D121083);the Shanxi Scholarship Council(Grant No.2020-135).
The terahertz(THz)vortex beam generators are designed and theoretically investigated based on single-layer ultra-thin transmission metasurfaces.Noncontinuous phase changes of metasurfaces are obtained by utilizing Pan...
The cluster-shaped plasmonic nanostructures are used to manage the incident light inside an ultra-thin silicon solar cell.Here we simulate spherical,conical,pyramidal,and cylindrical nanoparticles in a form of a clust...
Project supported by the Zhejiang Provincial Natural Science Foundation of China(Grant No.LZ19F040001);the National Natural Science Foundation of China(Grant No.61473287);the NSFC–Zhejiang Joint Fund for the Integration of Industrialization Informatization,China(Grant No.U1609213)
Thermal conductivity is an important material parameter of silicon when studying the performance and reliability of devices or for guiding circuit design when considering heat dissipation, especially when the self-hea...
Project supported by the National Natural Science Foundation of China(Grant Nos.61331005,61471388,and 61501503)
Low profile and light weight are very important for practical applications of a spoof surface plasmon polariton(SSPP)coupler, especially at low frequencies. In this paper, we propose and design an ultra-thin, light-...
Project supported by the National Natural Science Foundation of China(Grant No.61372034)
Circularly polarized (CP) lens antenna has been applied to numerous wireless communication systems based on its unique advantages such as high antenna gain, low manufacturing cost, especially stable data transmissio...
supported by the National Natural Science Foundation of China(Grant No.61372034)
We propose an anisotropic planar transmitting metasurface, which has the ability to manipulate orthogonally-polarized electromagnetic waves in the reflection and refraction modes respectively. The metasurface is compo...
Project supported by the National Natural Science Foundation of China(Grant No.61372034)
A new method to design an ultra-thin high-gain circularly-polarized antenna system with high efficiency is proposed based on the geometrical phase gradient metasurface(GPGM).With an accuracy control of the transmiss...
supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129);the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences
The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,i...