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Removal of GaN film over AlGaN with inductively coupled BCl_(3)/Ar atomic layer etch
《Chinese Physics B》2022年第1期613-617,共5页Jia-Le Tang Chao Liu 
the National Foreign Experts Bureau High-end Foreign Experts Project,China(Grant No.G20190114003);the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018063);the Natural Science Research Projects of Colleges and Universities in Jiangsu Province,China(Grant No.19KJD140002);the Scientific Research Program for Doctoral Teachers of JSNU,China(Grant No.9212218113).
Atomic layer etching(ALE)of thin film GaN(0001)is reported in detail using sequential surface modification by BCl_(3) adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive...
关键词：atomic layer etch GaN high electron mobility transistor 
Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments被引量：1
《Chinese Physics B》2020年第10期459-463,共5页Si-Qi Jing Xiao-Hua Ma Jie-Jie Zhu Xin-Chuang Zhang Si-Yu Liu Qing Zhu Yue Hao 
Project supported by the National Natural Science Foundation of China (Grant Nos. 61704124, 11690042, and 61634005).
Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interfa...
关键词：AlGaN/GaN MOS-HEMTs interface traps border traps photo-assisted C-V measurement 
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material被引量：1
《Chinese Physics B》2012年第11期335-339,共5页任万春 刘波 宋志棠 向阳辉 王宗涛 张北超 封松林 
Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121);the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...
关键词：deposit-etch deposit process single step deposit gap filling RE-DEPOSITION 
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