Β-FESI2

作品数：85被引量：152H指数：8
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相关机构：贵州大学兰州理工大学大连理工大学安顺学院更多>>
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相关基金：国家自然科学基金国家教育部博士点基金贵州省自然科学基金国家高技术研究发展计划更多>>
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β-FeSi_2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study
《Chinese Physics B》2014年第3期663-668,共6页袁吉仁 沈鸿烈 周浪 黄海宾 周耐根 邓新华 余启名 
Project supported by the National Natural Science Foundation of China(Grant Nos.61176062,61306084,and 51361022);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China;the Ph.D.Program Foundation of Ministry of Education of China(Grant No.20113601120006);the Natural Science Foundation of Jiangxi Province,China(Grant No.20122BAB202002);the Science and Technology Project of Education Department of Jiangxi Province,China(Grant No.GJJ13010)
Using β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the β-FeSi2 subcell c...
关键词：Β-FESI2 solar cell temperature coefficient conversion efficiency 
Resonant energy transfer from nanocrystal Si to β-FeSi_2 in hybrid Si/β-FeSi_2 film
《Chinese Physics B》2013年第10期52-55,共4页何久洋 张祺桢 吴兴龙 朱剑豪 
Project supported by the National Basic Research Program of China(Grant Nos.2011CB922102 and 2013CB932901);the National Natural Science Foundation of China(Grant No.60976063);the Priority Academic Program Development(PAPD)of Higher Education Institutions of Jiangsu Province and HongKong Research Grants Council(RGC)General Research Funds(GRF)(Grant Nos.CityU 112510 and CityU 112212)
The photoluminescence （PL） characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, ...
关键词：β-FeSi2 nanocrystal photoluminescence resonant charge transfer 
Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions被引量：1
《Chinese Physics B》2013年第3期447-452,共6页蒲红斌 贺欣 全汝岱 曹琳 陈治明 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134)
In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide（β-FeSi2） as the active region for the first time.The optoelectronic characteristics o...
关键词：β-FeSi2/4H-SiC near-infrared photodetector spectral response 
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