MULTILAYERS

作品数：233被引量：236H指数：7
导出分析报告
相关领域：理学一般工业技术更多>>
相关作者：姜恩永吴少兵白海力田仁玉胡书新更多>>
相关机构：中国科学院天津大学更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划高等学校学科创新引智计划中国博士后科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Journal of Semiconductorsx
共 条 记 录，以下是1-4
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Hard X-ray resonant reflectivity studies of ultrathin WS_(2) layers grown by pulsed laser deposition
《Journal of Semiconductors》2025年第3期102-108,共7页Sergey M.Suturin Polina A.Dvortsova Alexander M.Korovin Vladimir V.Fedorov Evgeniya Yu.Lobanova Nikolai S.Sokolov 
supported by the Ministry of Science and Higher Education of the Russian Federation(agreement No.075-15-2021-1349)。
Synchrotron method of resonant X-ray reflectivity 2D mapping has been applied to study ultrathin epitaxial layers of WS_(2)grown by pulsed laser deposition on Al_(2)O_(3)(0001)substrates.The measurements were carried ...
关键词：transition metal dichalcogenides epitaxial multilayers pulsed layer deposition resonant X-ray reflectivity non-destructive depth profiling 
Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM
《Journal of Semiconductors》2023年第12期133-140,共8页Zhenzhen Kong Hongxiao Lin Hailing Wang Yanpeng Song Junjie Li Xiaomeng Liu Anyan Du Yuanhao Miao Yiwen Zhang Yuhui Ren Chen Li Jiahan Yu Jinbiao Liu Jingxiong Liu Qinzhu Zhang Jianfeng Gao Huihui Li Xiangsheng Wang Junfeng Li Henry HRadamson Chao Zhao Tianchun Ye Guilei Wang 
supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences (Project ID.XDA0330300);in part by Innovation Program for Quantum Science and Technology (Project ID.2021ZD0302301);in part by the Youth Innovation Promotion Association of CAS (Project ID.2020037)。
Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characte...
关键词：RPCVD EPITAXY SiGe/Si multilayers L-GAAFETs VS-DRAM 
Si nanocrystals-based multilayers for luminescent and photovoltaic device applications被引量：2
《Journal of Semiconductors》2018年第6期82-91,共10页Peng Lu Dongke Li Yunqing Cao Jun Xu Kunji Chen 
Project supported by the National Natural Science Foundation of China(Nos.11774155,11274155)
Low dimensional Si materials have attracted much attention because they can be developed in many kinds of new-generation nano-electronic and optoelectronic devices, among which Si nanocrystals-based mul- tilayered mat...
关键词：quantum dot SUPERLATTICES LUMINESCENT PHOTOVOLTAIC 
Resonant tunnelling in nc-Si/SiO_2 multilayers at room temperature
《Journal of Semiconductors》2011年第8期23-26,共4页陈德媛 
Project supported by the Jiangsu Provincial Foundation for Youths,China(No.09KJB510008) and the Research Foundation for Advanced Talents of Nanjing University of Post and Telecommunications,China(No.NY208056).
Nc-Si/SiO_2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology,followed by three-step thermal treatments.Carrier transportation at r...
关键词：resonant tunnelling work function quantum dots 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部