P-SI

作品数：177被引量：225H指数：7
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Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell被引量：2
《Science China(Technological Sciences)》2013年第8期1870-1876,共7页HE Bo WANG HongZhi LI YaoGang MA ZhongQuan XU Jing ZHANG QingHong WANG ChunRui XING HuaiZhong ZHAO Lei WANG DunDong 
supported by the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University (Grant No.13M1060102);the Fundamental Research Funds for the Central Universities,China,Donghua University (Grant No. 13D110913);National Natural Science Foundation of China (Grant Nos. 51072034,11174048,51172042);the Cultivation Fund of the Key Scientific and Technical Innovation Project of China (Grant No. 708039);Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 201100751300-01);Science and Technology Commission of Shanghai Municipality (Grant No. 12nm0503900);the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning;the Program of Introducing Talents of Discipline to Universities of China(Grant No. 111-2-04)
Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The micro...
关键词：amorphous indium-tin-oxide（a-ITO） film radio-frequency（RF） magnetron sputtering heterojunction solar cell current-voltage（I-V） characteristics 
Reliability of Au/PZT/BIT/p-Si ferroelectric diode
《Science China(Technological Sciences)》2002年第2期160-165,共6页王华 于军 董小敏 周文利 王耘波 颜冲 周东祥 
This work was supported by the National Natural Science Foundation of China (Grant No. 69771024) and the Natural Science Foundation of Hubei Province (Grant No. 98J036) .
A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I–V characteristics, capacitance retention, f...
关键词：FERROELECTRIC momeries ferroelectric diode I-V characteristics fatigue imprint. 
Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode
《Science China(Technological Sciences)》2001年第3期274-279,共6页王华 于军 董晓敏 周文利 王耘波 郑远开 赵建宏 
This work was supported by the National Natural Science Foundation of China (Grant No. 69771024) ; the Natural Science Foundation of Hebei Province (Grant No. 98J026) .
A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are inves...
关键词：ferroeletric films memory diode Pb(Zr0.52Ti0.48)O3 BI4TI3O12 
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