supported by the National Natural Science Foundation of China (22175060 and 12304082);Shenzhen Science and Technology Program (JCYJ20220530160407016);the Natural Science Foundation of Hunan Province (2023JJ20001);the support from the U.S. National Science Foundation (2004251)。
Layered metal dichalcogenides (LMDs) neuromorphic memristor devices offer a promising alternative toconventional von Neumann architectures, addressing speedand energy efficiency constraints. However, challenges remain...